1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference
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Al-Ge reflow sputtering for submicron-contact-hole filling

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.152981 ◽

2002 ◽

Cited By ~ 2

Author(s):

K. Kukuta ◽

T. Kikkawa ◽

M. Aoki

Keyword(s):

Hole Filling

Electromigration improvements with titanium underlay and overlay in Al(Cu) metallurgy

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.152994 ◽

2002 ◽

Cited By ~ 10

Author(s):

J.J. Estabil ◽

H.S. Rathore ◽

E.N. Levine

The material characteristics of a new methyl-phenyl silsesquioxane spin-on glass for use in a global nonetchback interconnect planarization process

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.153029 ◽

2002 ◽

Author(s):

D.D.J. Allman ◽

K.P. Fuchs ◽

D.L. Kwong

Keyword(s):

Material Characteristics ◽

Planarization Process ◽

Methyl Phenyl

CVD aluminum for submicron VLSI metallization

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.152951 ◽

2002 ◽

Cited By ~ 2

Author(s):

W.Y.-C. Lai ◽

K.P. Cheung ◽

D.P. Favreau ◽

C. Case ◽

R. Liu ◽

...

Formation of vertical links in standard CMOS double-level metallizations by application of Nd:YAG- and excimer-laser radiation

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.152983 ◽

2002 ◽

Cited By ~ 2

Author(s):

H.-D. Hartmann ◽

T. Hillmann-Ruge

Keyword(s):

Laser Radiation ◽

Excimer Laser ◽

Excimer Laser Radiation

Accelerated life time tests of laser formed vertical links of standard CMOS double level metallizations

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.153039 ◽

2002 ◽

Cited By ~ 2

Author(s):

H.-D. Hartmann ◽

T. Hillmann-Ruge

Keyword(s):

Life Time ◽

Accelerated Life

Thin film microstructure simulation of RF bias planarized metal interconnects using a ballistic deposition model

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.153023 ◽

2002 ◽

Cited By ~ 1

Author(s):

S.K. Dew ◽

T. Smy ◽

M.J. Brett

Keyword(s):

Thin Film ◽

Deposition Model ◽

Microstructure Simulation ◽

Film Microstructure ◽

Metal Interconnects

Multilevel interconnects using Al CVD

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.153008 ◽

2002 ◽

Author(s):

S. Wolff ◽

J. Chang ◽

J. Estabil ◽

S. Luce ◽

E. Granneman

A characterization of PECVD TEOS BPSG planarity and metal-field Vt on a submicron CMOS EPROM

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.153028 ◽

2002 ◽

Author(s):

E.E. Ibok ◽

S. Garg ◽

E. Lee ◽

J. O'Banon

Keyword(s):

Submicron Cmos

A novel submicron Al contact filling technology for ULSI metallization

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference ◽

10.1109/vmic.1991.152986 ◽

2002 ◽

Cited By ~ 1

Author(s):

C. Yu ◽

T.T. Doan ◽

M. Grief

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Al-Ge reflow sputtering for submicron-contact-hole filling

Electromigration improvements with titanium underlay and overlay in Al(Cu) metallurgy

The material characteristics of a new methyl-phenyl silsesquioxane spin-on glass for use in a global nonetchback interconnect planarization process

CVD aluminum for submicron VLSI metallization

Formation of vertical links in standard CMOS double-level metallizations by application of Nd:YAG- and excimer-laser radiation

Accelerated life time tests of laser formed vertical links of standard CMOS double level metallizations

Thin film microstructure simulation of RF bias planarized metal interconnects using a ballistic deposition model

Multilevel interconnects using Al CVD

A characterization of PECVD TEOS BPSG planarity and metal-field Vt on a submicron CMOS EPROM

A novel submicron Al contact filling technology for ULSI metallization

1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference
Latest Publications