Bis(1-Chloroethyl Thallium Chloride) Oxide 471-03-4

The spectrum of thallium chloride

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1938.0090 ◽

1938 ◽

Vol 166 (925) ◽

pp. 238-249 ◽

Cited By ~ 10

Keyword(s):

The Other ◽

Electronic Transitions ◽

Sufficient Information ◽

Thallium Chloride ◽

Band Spectra ◽

Vibrational Constants

The results of a study of the spectrum of thallium fluoride (TIF) which have already been published (Howell 1937) contained so many points of unusual interest that it was considered desirable to extend the investigation to the other halides of thallium. In particular it was hoped to acquire sufficient information concerning the electronic transitions in TICI to enable a comparison to be made of the electronic levels of this molecule with those of TIF. Furthermore, certain of the vibrational constants of TICI, as listed in such reference works as Jevons' "Report on Band Spectra" (1932) and Sponer’s "Molekülspektren" (1936) seemed so abnormal as to justify a re-examination of this spectrum.

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Thallium chloride (TlCl) Grüneisen constant, compressibility, TlCl (I)-phase

Non-Tetrahedrally Bonded Elements and Binary Compounds I - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10681727_556 ◽

2005 ◽

pp. 1-3

Author(s):

Keyword(s):

Thallium Chloride ◽

Grüneisen Constant

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Optical and Electrical Analyses of Thallium Sulphide Thin Films

Jordan Journal of Physics ◽

10.47011/14.3.7 ◽

2021 ◽

Vol 14 (3) ◽

pp. 249-253

Keyword(s):

Thin Films ◽

Solar Cells ◽

Soda Lime ◽

High Energy ◽

Window Layer ◽

Soda Lime Glass ◽

Energy Band Gap ◽

Thallium Chloride ◽

Light Region ◽

Silicon And Germanium

Abstract: In this paper, suitability of thallium sulphide films were investigated as an alternative to conventional silicon and germanium that were used as window layers in solar cells. Thin films were deposited on soda lime glass (SLG) substrates in a chemical bath containing Thallium Chloride (TlCl2) and Thiourea (NH2)2CS which was conditioned at 80 ºC for about 5 hours to deposit the films. Effects of annealing on the film samples at 300 ºC and 350 ºC were studied respectively by use of UV-VIS Avantes electrophotometer and Four-Point-Probe (FPP) machine in the light region with wavelength range from 200 nm to 1000 nm. The results obtained suggest that the thin films obtained are good materials for optoelectronics. The absorption spectra exhibited a relatively high energy band-gap. Materials of this nature are good for window layers which serve as passage to the absorber layer where needed charge carriers are produced. Keywords: Thin film, Thallium Sulphide, Window layer, Optoelectronics, Solar cells.

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