Optical and Electrical Analyses of Thallium Sulphide Thin Films

2021 ◽  
Vol 14 (3) ◽  
pp. 249-253
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Soda Lime ◽  
High Energy ◽  
Window Layer ◽  
Soda Lime Glass ◽  
Energy Band Gap ◽  
Thallium Chloride ◽  
Light Region ◽  
Silicon And Germanium

Abstract: In this paper, suitability of thallium sulphide films were investigated as an alternative to conventional silicon and germanium that were used as window layers in solar cells. Thin films were deposited on soda lime glass (SLG) substrates in a chemical bath containing Thallium Chloride (TlCl2) and Thiourea (NH2)2CS which was conditioned at 80 ºC for about 5 hours to deposit the films. Effects of annealing on the film samples at 300 ºC and 350 ºC were studied respectively by use of UV-VIS Avantes electrophotometer and Four-Point-Probe (FPP) machine in the light region with wavelength range from 200 nm to 1000 nm. The results obtained suggest that the thin films obtained are good materials for optoelectronics. The absorption spectra exhibited a relatively high energy band-gap. Materials of this nature are good for window layers which serve as passage to the absorber layer where needed charge carriers are produced. Keywords: Thin film, Thallium Sulphide, Window layer, Optoelectronics, Solar cells.

scholarly journals Adhesion Improvement and Characterization of Magnetron Sputter Deposited Bilayer Molybdenum Thin Films for Rear Contact Application in CIGS Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Weimin Li ◽  
Xia Yan ◽  
Armin G. Aberle ◽  
Selvaraj Venkataraj
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Magnetron Sputtering ◽  
Surface Oxidation ◽  
Bottom Layer ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Individual Layer ◽  
Glass Substrates ◽  
Cigs Solar Cells

Molybdenum (Mo) thin films are widely used as rear electrodes in copper indium gallium diselenide (CIGS) solar cells. The challenge in Mo deposition by magnetron sputtering lies in simultaneously achieving good adhesion to the substrates while retaining the electrical and optical properties. Bilayer Mo films, comprising five different thickness ratios of a high pressure (HP) deposited bottom layer and a low pressure (LP) deposited top layer, were deposited on 40 cm × 30 cm soda-lime glass substrates by DC magnetron sputtering. We focus on understanding the effects of the individual layer properties on the resulting bilayer Mo films, such as microstructure, surface morphology, and surface oxidation. We show that the thickness of the bottom HP Mo layer plays a major role in determining the micromechanical and physical properties of the bilayer Mo stack. Our studies reveal that a thicker HP Mo bottom layer not only improves the adhesion of the bilayer Mo, but also helps to improve the film crystallinity along the preferred [110] direction. However, the surface roughness and the porosity of the bilayer Mo films are found to increase with increasing bottom layer thickness, which leads to lower optical reflectance and a higher probability for oxidation at the Mo surface.

The Influence of the Composition Ratio on CZTS-based Thin Film Solar Cells

2009 ◽  
Vol 1165 ◽  
Author(s):  
Hironori Katagiri ◽  
Kazuo Jimbo ◽  
Masami Tahara ◽  
Hideaki Araki ◽  
Koichiro Oishi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Soda Lime Glass ◽  
Photovoltaic Properties ◽  
Composition Ratio ◽  
Czts Thin Films

AbstractCu2ZnSnS4 (CZTS) thin films were fabricated by using three RF co-sputtering continued with sulfurization method. The new type of thin film solar cells using CZTS as an absorber consists of buffer-layer and window-layer on CZTS films that were fabricated on a Mo-coated Soda Lime Glass (SLG) substrate. It was confirmed that CZTS solar cells with high conversion efficiency existed in a relatively narrow composition region. In this paper, the fabrication method of CZTS-based thin film solar cells in our laboratory was stated briefly and the influence of the composition ratio on the photovoltaic properties were presented. Furthermore, the properties of a genuine non-toxic solar cell using a Cd-free buffer-layer were introduced.

scholarly journals Synthesis of simple, low cost and benign sol–gel Cu2InxZn1−xSnS4alloy thin films: influence of different rapid thermal annealing conditions and their photovoltaic solar cells

RSC Advances ◽  
2018 ◽  
Vol 8 (17) ◽  
pp. 9038-9048 ◽  
Author(s):  
Yingrui Sui ◽  
Yanjie Wu ◽  
Yu Zhang ◽  
Fengyou Wang ◽  
Yanbo Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Rapid Thermal Annealing ◽  
Low Cost ◽  
Sol Gel ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Annealing Conditions ◽  
Rapid Annealing ◽  
Photovoltaic Solar Cells

Cu2InxZn1−xSnS4(x= 0.4) alloy thin films were synthesized on soda lime glass (SLG) substrate by a simple low-cost sol–gel method followed by a rapid annealing technique.

scholarly journals Influence of Molybdenum Back Contact on the PID Effect for Cu(In,Ga)Se2 Solar Cells

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 794 ◽  
Author(s):  
Oliver Salomon ◽  
Wolfram Hempel ◽  
Oliver Kiowski ◽  
Erwin Lotter ◽  
Wolfram Witte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Glass Substrate ◽  
Optical Emission ◽  
Soda Lime ◽  
Deposition Process ◽  
Window Layer ◽  
Soda Lime Glass ◽  
Back Contact ◽  
Doping Density ◽  
Soda Lime Glass Substrate

The authors investigated the effect of an applied high voltage (1 kV) across the thickness of a soda-lime glass substrate of Cu(In,Ga)Se2 (CIGS) thin-film solar cells. Two types of CIGS cells were tested, differing only in the deposition process of the molybdenum (Mo) back contact. Whilst one cell type was susceptible to potential induced degradation (PID), the other exhibited highly increased stability against PID. PID occurs for PID-susceptible cells after the transfer of a certain amount of charge through the soda-lime glass substrate when the Mo back contact of the cell operates as a cathode (negatively biased versus backside of the substrate). Capacitance–voltage and electron-beam-induced current measurements showed an enlarged space charge region expanding to the Mo back contact and a lowered doping density by a negative potential for PID-susceptible cells. Glow discharge optical emission spectroscopy (GDOES) revealed an accumulation of sodium (Na) in the solution-grown CdS buffer layer and a segregation on the surface of the ZnO:Al window layer for higher charges for PID-susceptible cells. Cells with increased PID immunity did not show an increase of Na for charges up to around 9 mC/cm². We demonstrate that it is possible to improve the PID stability of CIGS solar cells by modification of the molybdenum back contact.

Influence of proton irradiation and development of flexible CdTe solar cells on polyimide

2001 ◽  
Vol 668 ◽  
Author(s):  
A. Romeo ◽  
D.L. Bätzner ◽  
H. Zogg ◽  
A.N. Tiwari
Keyword(s):  
Solar Cells ◽  
Proton Irradiation ◽  
Soda Lime ◽  
High Energy ◽  
Soda Lime Glass ◽  
Vacuum Deposition ◽  
Soda Lime Glass Substrate ◽  
Polymer Substrates ◽  
Cdte Solar Cells ◽  
Vacuum Deposition Method

ABSTRACTCdTe/CdS solar cells of ∼10% efficiency, developed with a vacuum deposition method were irradiated with high-energy protons of different fluences. The Voc and f.f. of irradiated cells increase or decrease depending on the fluence. The normal soda lime glass substrate darkens under the irradiation; therefore low Isc is measured. Measurements suggest that CdTe solar cells are highly stable under proton flux. Flexible and lightweight solar cells were developed in a superstrate configuration on polymer substrates. 8.6 % efficiency cells with Voc∼770 mV and Isc of 20.3 mA/cm2 were achieved.

The Advantages of Ga-Graded Obtained by Growth Profile Modification and Na Incorporation on Cu(In,Ga)Se2 Solar Cells

2014 ◽  
Vol 936 ◽  
pp. 633-638
Author(s):  
Rachsak Sakdanuphab ◽  
Sojiphong Chatraphorn ◽  
Kajornyod Yoodee
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Structural Property ◽  
Growth Process ◽  
Optical Transmission ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Growth Profile

Cu (In,Ga)Se2 (CIGS) compound is a p-type semiconductor that has been used as light absorber layer in high efficiency thin film solar cell. The CIGS compound can be adjusted the band gap energy by varying the ratio of [Ga]/([In]+[Ga]) ratio (x). From theoretical and simulation, it was found that band gap grading in CIGS thin films showed the advantages to increase the efficiency of solar cells. Generally, the band gap grading can be done by the growth of non homogeneous x-ratio in depth of CIGS thin films. In this work, we develop two approaches to create band gap grading in CIGS thin films; (1) modifying the growth profile and (2) using Na incorporation in the growth process. The effects of Ga-graded would be revealed and compared with homogeneous CIGS thin films. CIGS thin films were grown on soda-lime glass and Al2O3 coated soda-lime glass substrates by molecular beam deposition method. The growth process was based on 2-stage and 3-stage growth profiles. The as grown films were characterized for their structural property, chemical composition and optical transmission as well as solar cell performance. The Auger electron spectroscopy in depth profiles revealed the variation of x-ratio increasing from the surface toward the back contact in CIGS films with our modified growth profile and Na incorporation. This result indicated Ga-graded in CIGS thin films. The structural property of Ga-graded CIGS films showed the (112) preferred orientation of the chalcopyrite structure with a broad asymmetric spectrum related to the inhomogeneous structure. The optical transmission measurements of the Ga-graded CIGS film showed the broad transition near the absorption edge indicating the effect of the band gap grading as a result of the variation in depth of the Ga-content. From I-V measurements, the solar cell efficiencies significantly increase due to the advantages of Ga-graded constitute.

Preparation and Characterization of PZT Thin Films on ITO/Glass Substrate by CSD

2006 ◽  
Vol 301 ◽  
pp. 41-44 ◽  
Author(s):  
Tomoya Ohno ◽  
Masayuki Fujimoto ◽  
Hisao Suzuki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Substrate ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Pzt Thin Films ◽  
Light Region ◽  
Pzt Thin Film ◽  
Ito Glass

This paper describes the deposition of PZT thin films on soda-lime glass substrate with ITO bottom electrode by CSD (Chemical Solution Deposition). The transmittance of the obtained PZT thin film on ITO/glass substrate was about 60 % in the visible light region. The deposited transparent PZT thin film exhibited the ferroelectricity of Pr=36.3 μC/cm2 and Ec=71.3 kV/cm. In addition, the piezoelectric property of the resultant PZT thin film was relatively large and exhibited the measured effective d33 of 120 pC/N after the polarization.

Irradiation Induced Changes in Semiconducting Thin Films

2013 ◽  
Vol 341 ◽  
pp. 181-210 ◽  
Author(s):  
S.K. Tripathi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Heavy Ions ◽  
Semiconductor Device ◽  
High Energy ◽  
Device Fabrication ◽  
Electrical Performance ◽  
Radiation Environment ◽  
Extended Defects ◽  
Semiconducting Thin Films

High-energy electron, proton, neutron, photon and ion irradiation of semiconductor diodes and solar cells has long been a topic of considerable interest in the field of semiconductor device fabrication. The inevitable damage production during the process of irradiation is used to study and engineer the defects in semiconductors. In a strong radiation environment in space, the electrical performance of solar cells is degraded due to direct exposure to energetically charged particles. A considerable amount of work has been reported on the study of radiation damage in various solar cell materials and devices in the recent past. In most cases, high-energy heavy ions damage the material by producing a large amount of extended defects, but high-energy light ions are suitable for producing and modifying the intrinsic point defects. The defects can play a variety of electronically active roles that affect the electrical, structural and optical properties of a semiconductor. This review article aims to present an overview of the advancement of research in the modification of glassy semiconducting thin films using different types of radiations (light, proton and swift heavy ions). The work which has been done in our laboratory related to irradiation induced effects in semiconducting thin films will also be compared with the existing literature.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

Application of ZnGa2O4:Mn Down-Conversion Layer to Increase the Energy-Conversion Efficiency of Perovskite Solar Cells

2021 ◽  
Vol 21 (8) ◽  
pp. 4362-4366
Author(s):  
Ji Yong Hwang ◽  
Chung Wung Bark ◽  
Hyung Wook Choi
Keyword(s):  
Solar Cells ◽  
Energy Conversion ◽  
Tin Oxide ◽  
Perovskite Solar Cells ◽  
Soda Lime ◽  
Light Transmittance ◽  
Soda Lime Glass ◽  
Manufacturing Cost ◽  
Wide Range ◽  
Down Conversion

The perovskite solar cell is capable of energy conversion in a wide range of wavelengths, from 300 nm to 800 nm, which includes the entire visible region and portions of the ultraviolet and infrared regions. To increase light transmittance of perovskite solar cells and reduce manufacturing cost of perovskite solar cells, soda-lime glass and transparent conducting oxides, such as indium tin oxide and fluorine-doped tin oxide are mainly used as substrates and light-transmitting electrodes, respectively. However, it is evident from the transmittance of soda-lime glass and transparent conductive oxides measured via UV-Vis spectrometry that they absorb all light near and below 310 nm. In this study, a transparent Mn-doped ZnGa2O4 film was fabricated on the incident surface of perovskite solar cells to obtain additional light energy by down-converting 300 nm UV light to 510 nm visible light. We confirmed the improvement of power efficiency by applying a ZnGa2O4:Mn down-conversion layer to perovskite solar cells.

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