Characterization of Interface Defects

Nanoscale CMOS ◽

10.1002/9781118621523.ch15 ◽

2013 ◽

pp. 545-573

Author(s):

P. Hurley ◽

O. Engström ◽

D. Bauza ◽

G. Ghibaudo

Keyword(s):

Interface Defects

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Characterization of interface defects in BiFeO3 metal–oxide–semiconductor capacitors deposited by radio frequency magnetron sputtering

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-015-3174-1 ◽

2015 ◽

Vol 26 (8) ◽

pp. 5987-5993 ◽

Author(s):

Senol Kaya ◽

Ercan Yilmaz ◽

Aliekber Aktag ◽

Jan Seidel

Keyword(s):

Magnetron Sputtering ◽

Metal Oxide ◽

Radio Frequency ◽

Metal Oxide Semiconductor ◽

Radio Frequency Magnetron ◽

Oxide Semiconductor ◽

Radio Frequency Magnetron Sputtering ◽

Interface Defects

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(Invited) Characterization of Interface Defects by the Charge Pumping Technique

ECS Transactions ◽

10.1149/07504.0029ecst ◽

2016 ◽

Vol 75 (4) ◽

pp. 29-37

Author(s):

T. Tsuchiya

Keyword(s):

Charge Pumping ◽

Interface Defects

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Characterization of interface defects in oxygen-implanted silicon films

Journal of Electronic Materials ◽

10.1007/bf02665028 ◽

1993 ◽

Vol 22 (2) ◽

pp. 207-214

Author(s):

Santos Mayo ◽

Jeremiah R. Lowney ◽

Peter Roitman

Keyword(s):

Silicon Films ◽

Interface Defects

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(Invited) Characterization of Interface Defects by the Charge Pumping Technique

ECS Meeting Abstracts ◽

10.1149/ma2016-02/26/1773 ◽

2016 ◽

Keyword(s):

Charge Pumping ◽

Interface Defects

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Contact potential difference methods for full wafer characterization of Si/SiO2 interface defects induced by plasma processing

10.1117/12.324400 ◽

1998 ◽

Author(s):

Piotr Edelman ◽

A. Savchouk ◽

M. Wilson ◽

Lubek Jastrzebski ◽

Jacek J. Lagowski ◽

...

Keyword(s):

Contact Potential Difference ◽

Plasma Processing ◽

Potential Difference ◽

Contact Potential ◽

Interface Defects ◽

Difference Methods

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Characterization of interface defects in ALD Al 2 O 3 /p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz

Solid-State Electronics ◽

10.1016/j.sse.2016.01.001 ◽

2016 ◽

Vol 118 ◽

pp. 18-25 ◽

Author(s):

Siyuan Gu ◽

Jie Min ◽

Yuan Taur ◽

Peter M. Asbeck

Keyword(s):

Mos Capacitors ◽

Interface Defects

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Characterization of interface defects in GaAs‐GaAlAs superlattices

Applied Physics Letters ◽

10.1063/1.98875 ◽

1987 ◽

Vol 51 (1) ◽

pp. 27-29 ◽

Author(s):

A. Mauger ◽

S. L. Feng ◽

J. C. Bourgoin

Keyword(s):

Interface Defects

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Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2655367 ◽

2017 ◽

Vol 64 (3) ◽

pp. 1045-1052 ◽

Author(s):

Roberta Stradiotto ◽

Gregor Pobegen ◽

Clemens Ostermaier ◽

Michael Waltl ◽

Alexander Grill ◽

...

Keyword(s):

Activation Energies ◽

Interface Defects

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Characterization of Si/SiO2 interface defects by electron spin resonance

Progress in Surface Science ◽

10.1016/0079-6816(83)90006-0 ◽

1983 ◽

Vol 14 (3) ◽

pp. 201-294 ◽

Author(s):

Edward H. Poindexter ◽

Philip J. Caplan

Keyword(s):

Electron Spin Resonance ◽

Electron Spin ◽

Interface Defects ◽

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Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si〈100〉 systems

Microelectronics Reliability ◽

10.1016/j.microrel.2004.02.017 ◽

2005 ◽

Vol 45 (1) ◽

pp. 57-64 ◽

Author(s):

Shinji Fujieda ◽

Yoshinao Miura ◽

Motofumi Saitoh ◽

Yuden Teraoka ◽

Akitaka Yoshigoe

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Interface Defects

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