Emergent Phenomena in Two-Dimensional Electron Gases at Oxide Interfaces

2013 ◽  
pp. 49-49
Author(s):  
Susanne Stemmer ◽  
Pouya Moetakef ◽  
Daniel Ouellette ◽  
S. James Allen
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Oxide Interfaces ◽  
Emergent Phenomena

scholarly journals Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

2015 ◽  
Vol 14 (8) ◽  
pp. 801-806 ◽  
Author(s):  
Y. Z. Chen ◽  
F. Trier ◽  
T. Wijnands ◽  
R. J. Green ◽  
N. Gauquelin ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Modulation Doping ◽  
Electron Gases ◽  
Oxide Interfaces

scholarly journals The origin of two-dimensional electron gases at oxide interfaces: insights from theory

2014 ◽  
Vol 26 (14) ◽  
pp. 143201 ◽  
Author(s):  
N C Bristowe ◽  
Philippe Ghosez ◽  
P B Littlewood ◽  
Emilio Artacho
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Oxide Interfaces

scholarly journals High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities

2013 ◽  
Vol 22 (11) ◽  
pp. 116803 ◽  
Author(s):  
Yun-Zhong Chen ◽  
Nini Pryds ◽  
Ji-Rong Sun ◽  
Bao-Gen Shen ◽  
Søren Linderoth
Keyword(s):  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Oxide Interfaces

scholarly journals Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

2013 ◽  
Vol 26 (9) ◽  
pp. 1462-1467 ◽  
Author(s):  
Y. Z. Chen ◽  
N. Bovet ◽  
T. Kasama ◽  
W. W. Gao ◽  
S. Yazdi ◽  
...  
Keyword(s):  
Room Temperature ◽  
High Mobility ◽  
Complex Oxide ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Crystalline Complex ◽  
Electron Gases ◽  
Oxide Interfaces

scholarly journals Effect of Sr-doping of LaMnO3 spacer on modulation-doped two-dimensional electron gases at oxide interfaces

2017 ◽  
Vol 121 (9) ◽  
pp. 095305 ◽  
Author(s):  
Y. Z. Chen ◽  
Y. L. Gan ◽  
D. V. Christensen ◽  
Y. Zhang ◽  
N. Pryds
Keyword(s):  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Oxide Interfaces

scholarly journals Two-Dimensional Electron Gases at Oxide Interfaces

MRS Bulletin ◽  
2008 ◽  
Vol 33 (11) ◽  
pp. 1027-1034 ◽  
Author(s):  
J. Mannhart ◽  
D.H.A. Blank ◽  
H.Y. Hwang ◽  
A.J. Millis ◽  
J.-M. Triscone
Keyword(s):  
High Electron Mobility Transistors ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Oxide Interfaces ◽  
Fractional Quantum Hall ◽  
Electron Mobility Transistors ◽  
Hall Effects ◽  
The Status

AbstractTwo-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxide interfaces. These electron gases typically result from reconstruction of the complex electronic structure of the oxides, so that the electronic behavior of the interfaces can differ from the behavior of the bulk. Reports on magnetism and superconductivity in oxide 2DEGs illustrate their capability to encompass phenomena not shown by interfaces in conventional semiconductors. This article reviews the status and prospects of oxide 2DEGs.

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