Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

2021 ◽  
pp. 2106814
Author(s):  
Fang Liu ◽  
Tao Wang ◽  
Zhihong Zhang ◽  
Tong Shen ◽  
Xin Rong ◽  
...  
Keyword(s):  
Atomic Configuration

Development Of High-Strength Aluminum-Based Alloys By Synthesis Of New Multicomponent Quasicrystals

1998 ◽  
Vol 553 ◽  
Author(s):  
A. Inoue ◽  
H. M. Kimura
Keyword(s):  
Mechanical Properties ◽  
Powder Metallurgy ◽  
Rapid Solidification ◽  
Future Development ◽  
High Strength ◽  
Supercooled Liquid ◽  
Engineering Properties ◽  
Atomic Configuration ◽  
Lanthanide Metal ◽  
Bulk Alloys

AbstractBy the control of composition, clustered atomic configuration and stability of the supercooled liquid in the rapid solidification and powder metallurgy processes, high-strength Al-based bulk alloys containing nanoscale nonperiodic phases were produced in AI-Ln-LTM, AI-ETM-LTM and Al-(V, Cr, Mn)-LTM (Ln=lanthanide metal, LTM=VII and VIII group metals, ETM=IV to VI group metals) alloys containing high Al contents of 92 to 95 at%. The nonperiodic phases are composed of amorphous or icosahedral (I) phase. In particular, the Al-based bulk alloys consisting of nanoscale I particles surrounded by Al phase exhibit much better mechanical properties as compared with commercial Al base alloys. The success of producing the Al-based alloys with good engineering properties by use of I phase is important for future development of I-based alloys as practical materials.

Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates

2009 ◽  
Vol 156-158 ◽  
pp. 199-204
Author(s):  
Hiroaki Kariyazaki ◽  
Tatsuhiko Aoki ◽  
Kouji Izunome ◽  
Koji Sueoka
Keyword(s):  
Molecular Simulation ◽  
Wafer Bonding ◽  
Crystal Orientation ◽  
High Performance ◽  
Cmos Technology ◽  
Experimental Results ◽  
Interfacial Structure ◽  
Atomic Configuration ◽  
Promising Technology ◽  
Bonded Interface

Hybrid crystal orientation technology (HOT) substrates comprised of Si (100) and (110) surface orientation paralleling each <110> direction attract considerable attentions as one of the promising technology for high performance bulk CMOS technology. Although HOT substrates are fabricated by wafer bonding of Si (110) and Si (100) surfaces, it is not clear the atomic configuration of interfacial structure. Furthermore, the possibility for the interface to be an effective gettering source of impurity metals was not well studied. In this paper, we studied the interfacial structure and gettering efficiency of the atomic bonded interface by molecular simulations. The results indicate that the simulated atomic configuration and gettering efficiency of the bonded interface agreed well with the experimental results.

Atomic configuration of hydrogenated and clean Si(110) surfaces

1986 ◽  
Vol 34 (4) ◽  
pp. 2329-2335 ◽  
Author(s):  
H. Ampo ◽  
S. Miura ◽  
K. Kato ◽  
Y. Ohkawa ◽  
A. Tamura
Keyword(s):  
Atomic Configuration

scholarly journals Atomic configuration of boron pile-up at the Si/SiO2 interface

2004 ◽  
Vol 1 (6) ◽  
pp. 126-130 ◽  
Author(s):  
Masayuki Furuhashi ◽  
Tetsuya Hirose ◽  
Hiroshi Tsuji ◽  
Masayuki Tachi ◽  
Kenji Taniguchi
Keyword(s):  
Atomic Configuration ◽  
Pile Up

scholarly journals Direct and indirect excitons in boron nitride polymorphs: A story of atomic configuration and electronic correlation

2018 ◽  
Vol 98 (12) ◽  
Author(s):  
Lorenzo Sponza ◽  
Hakim Amara ◽  
Claudio Attaccalite ◽  
Sylvain Latil ◽  
Thomas Galvani ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electronic Correlation ◽  
Atomic Configuration ◽  
Indirect Excitons
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