Abstract
Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structures, regularity and crystalline orientation are determined once a specific substrate is chosen. In this work, we reveal the growth of twisted oxide lateral homostructures with multiple conjunction degree of freedom. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems. Our results establish an efficient pathway towards twisted lateral homostructures, allowing epitaxial films to be arbitrarily tailored at designated positions with unbounded in-plane conjunction tunability.
Strain Engineering of Magnetic Anisotropy in Epitaxial Films of Cobalt Ferrite
