Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 A W −1 Based on Nitrogen‐Doped TiO x and AlO x Insulator Layers

2021 ◽  
pp. 2100467
Author(s):  
Abdullah H. Alshehri ◽  
Ahmed Shahin ◽  
Kissan Mistry ◽  
Khaled H. Ibrahim ◽  
Mustafa Yavuz ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Nitrogen Doped ◽  
Insulator Layers

Enhanced X‐Ray Photoelectric Yields from Metal‐Insulator Layers

1970 ◽  
Vol 41 (2) ◽  
pp. 815-816
Author(s):  
John E. Jacobs ◽  
Michael G. Kovac
Keyword(s):  
Metal Insulator ◽  
X Ray ◽  
Insulator Layers

Theoretical and Experimental Studies on Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor and Metal-Insulator -Ferroelectric-Insulator-Semiconductor Structures

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Mitsue Takahashi ◽  
Kazushi Kodama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Time Dependence ◽  
Retention Time ◽  
Experimental Studies ◽  
Dielectric Constants ◽  
Metal Insulator ◽  
Semiconductor Structures ◽  
Ferroelectric Layer ◽  
Retention Characteristics ◽  
Insulator Layers ◽  
Simulated Time

AbstractRetention characteristics of Metal-Ferroelectric-Insulator-Semiconductor(MFIS) and Metal-Insulator-Ferroelectric-Insulator-Semiconductor(M-I-FIS) structures have been investigated both theoretically and experimentally. The simulated time dependence of capacitance for the MFIS has indicated that reducing currents through the ferroelectric and the insulator layers improves the retention characteristics more effectively than choosing the insulators with larger dielectric constants. The M-I-FIS structure has been studied in order to reduce the charge injection between the metal and the ferroelectric layer in the MFIS. The simulations have indicated that the M-I-FIS can provide much longer retention time than the original MFIS, although the experimental retention time of the M-I-FIS have almost the same as that of the MFIS.

Optical Spectroscopy of the Charge Accumulation Layer in Mis Structures with Polymeric Insulator and Semiconductor Layers

1989 ◽  
Vol 173 ◽  
Author(s):  
J. H. Burroughes ◽  
R. H. Friend
Keyword(s):  
Silicon Dioxide ◽  
Optical Measurements ◽  
Charge Storage ◽  
Electronic Excitations ◽  
Charge Accumulation ◽  
Metal Insulator ◽  
Accumulation Layer ◽  
Precursor Route ◽  
Insulator Layers ◽  
Mis Structures

ABSTRACTMetal-Insulator-Semiconductor (MIS) and MISFET structures constructed with polyacetylene prepared by the Durham precursor route provide convenient systems for the investigation of charge storage and transport in this polymer. The charge accumulation layer is particularly easy to form, and is of particular interest because charge is introduced into the polymer without compensation by chemical dopants. Charge is stored in soliton-like excitations of the chain, and we are able to characterise these from optical measurements of their electronic excitations. We find that the nature of the soliton-like states is very sensitive to the structure of the polyacetylene at the interface between the insulator and polyacetylene, and we report here the properties of devices formed with various organic polymers as the insulator layers which we contrast with those formed with silicon dioxide.

Fermi-surface reconstruction close to a pressure-induced metal-insulator transition

2004 ◽  
Vol 114 ◽  
pp. 277-281 ◽  
Author(s):  
J. Wosnitza ◽  
J. Hagel ◽  
O. Stockert ◽  
C. Pfleiderer ◽  
J. A. Schlueter ◽  
...  
Keyword(s):  
Fermi Surface ◽  
Surface Reconstruction ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Fermi Surface Reconstruction
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