scholarly journals Doping of [In2(phen)3 Cl6 ]·CH3 CN·2H2 O Indium-Based Metal-Organic Framework into Hole Transport Layer for Enhancing Perovskite Solar Cell Efficiencies

2018 ◽  
Vol 8 (12) ◽  
pp. 1800552 ◽  
Author(s):  
Mengru Li ◽  
Debin Xia ◽  
Yulin Yang ◽  
Xi Du ◽  
Guohua Dong ◽  
...  
Keyword(s):  
Solar Cell ◽  
Metal Organic Framework ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Metal Organic ◽  
Organic Framework

scholarly journals High-Hole-Mobility Metal–Organic Framework as Dopant-Free Hole Transport Layer for Perovskite Solar Cells

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Ruonan Wang ◽  
Weikang Yu ◽  
Cheng Sun ◽  
Kashi Chiranjeevulu ◽  
Shuguang Deng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Metal Organic Framework ◽  
Perovskite Solar Cells ◽  
Hole Mobility ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Free Hole ◽  
Metal Organic ◽  
Organic Framework

AbstractA dopant-free hole transport layer with high mobility and a low-temperature process is desired for optoelectronic devices. Here, we study a metal–organic framework material with high hole mobility and strong hole extraction capability as an ideal hole transport layer for perovskite solar cells. By utilizing lifting-up method, the thickness controllable floating film of Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2 at the gas–liquid interface is transferred onto ITO-coated glass substrate. The Ni3(2,3,6,7,10,11-hexaiminotriphenylene)2 film demonstrates high compactness and uniformity. The root-mean-square roughness of the film is 5.5 nm. The ultraviolet photoelectron spectroscopy and the steady-state photoluminescence spectra exhibit the Ni3(HITP)2 film can effectively transfer holes from perovskite film to anode. The perovskite solar cells based on Ni3(HITP)2 as a dopant-free hole transport layer achieve a champion power conversion efficiency of 10.3%. This work broadens the application of metal–organic frameworks in the field of perovskite solar cells. Graphical Abstract

Chalcogenide As Inorganic Transport Layer in Perovskite Solar Cell

2021 ◽  
Author(s):  
Atul kumar
Keyword(s):  
Solar Cell ◽  
Fill Factor ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Band Alignment ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Band Offset ◽  
Primary Concern ◽  
Earth Abundant

Abstract Fill factor (FF) deficit and stability is a primary concern with the perovskite solar cell. Resistance values and band alignment at junction interface in perovskite are causing low fill factor. Moisture sensitivity of methylammonium lead halide perovskite is causing a stability issue. We tried to solve these issues by using inorganic hole transport layer (HTL). FF is sensitive to the band offset values. We study the band alignment/band offset effect at the Perovskite /HTL junction. Inorganic material replacing Spiro-MeOTAD can enhance the stability of the device by providing an insulation from ambient. Our simulation study shows that the earth abundant p-type chalcogenide materials of SnS as HTL in perovskite is comparable to Spiro-MeOTAD efficiency.

scholarly journals Hole Transport Behaviour of Various Polymers and Their Application to Perovskite-Sensitized Solid-State Solar Cells

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Jeongmin Lim ◽  
Seong Young Kong ◽  
Yong Ju Yun
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Solid State ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Good Efficiency ◽  
Promising Alternative ◽  
Transport Behaviour

Inorganic-organic mesoscopic solar cells become a promising alternative for conventional solar cells. We describe a CH3NH3PbI3 perovskite-sensitized solid-state solar cells with the use of different polymer hole transport materials such as 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene (spiro-OMeTAD), poly(3-hexylthiophene-2,5-diyl) (P3HT), and poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]] (PTB7). The device with a spiro-OMeTAD-based hole transport layer showed the highest efficiency of 6.9%. Interestingly, the PTB7 polymer, which is considered an electron donor material, showed dominant hole transport behaviors in the perovskite solar cell. A 200 nm thin layer of PTB7 showed comparatively good efficiency (5.5%) value to the conventional spiro-OMeTAD-based device.

scholarly journals High Photovoltage of 1 V on a Steady-State Certified Hole Transport Layer-Free Perovskite Solar Cell by a Molten-Salt Approach

2018 ◽  
Vol 3 (5) ◽  
pp. 1122-1127 ◽  
Author(s):  
Lukas Wagner ◽  
Sijo Chacko ◽  
Gayathri Mathiazhagan ◽  
Simone Mastroianni ◽  
Andreas Hinsch
Keyword(s):  
Steady State ◽  
Solar Cell ◽  
Molten Salt ◽  
Perovskite Solar Cell ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

scholarly journals Analysis of the role of hole transport layer materials to the performance of perovskite solar cell

2018 ◽  
Vol 67 ◽  
pp. 01021 ◽  
Author(s):  
Istighfari Dzikri ◽  
Michael Hariadi ◽  
Retno Wigajatri Purnamaningsih ◽  
Nji Raden Poespawati
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

Research in solar cells is needed to maximize Indonesia’s vast solar potential that can reach up to 207.898 MW with an average radiation of 4.8 kWh/m2/day. Organometallic perovskite solar cells (PSCs) have gained immense attention due to their rapid increase in efficiency and compatibility with low-cost fabrication methods. Understanding the role of hole transport layer is very important to obtain highly efficient PSCs. In this work, we studied the effect of Hole Transport Layer (HTL) to the performance of perovskite solar cell. The devices with HTL exhibit substantial increase in power conversion efficiency, open circuit voltage and short circuit current compared to the device without HTL. The best performing device is PSC with CuSCN as HTL layer, namely Voc of 0.24, Isc of 1.79 mA, 0.27 FF and efficiency of 0.09%.

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