Interwoven Nanowire Based On‐Chip Asymmetric Microsupercapacitor with High Integrability, Areal Energy, and Power Density

2020 ◽  
Vol 10 (42) ◽  
pp. 2001873
Author(s):  
Wei Yang ◽  
Yuxuan Zhu ◽  
Zhuofei Jia ◽  
Liang He ◽  
Lin Xu ◽  
...  
Author(s):  
Jiashen Li ◽  
◽  
Yun Pan ◽  

The improvement of chip integration leads to the increase of power density of system chips, which leads to the overheating of system chips. When dispatching the power density of system chips, some working modules are selectively closed to avoid all modules on the chip being turned on at the same time and to solve the problem of overheating. Taking 2D grid-on-chip network as the research object, an optimal scheduling algorithm of system-on-chip power density based on network-on-chip (NoC) is proposed. Under the constraints of thermal design power (TDP) and system, dynamic programming algorithm is used to solve the optimal application set throughput allocation from bottom to top by dynamic programming for the number and frequency level of each application configuration processor under the given application set of network-on-chip. On this basis, the simulated annealing algorithm is used to complete the application mapping aiming at heat dissipation effect and communication delay. The open and closed processor layout is determined. After obtaining the layout results, the TDP is adjusted. The maximum TDP constraint is iteratively searched according to the feedback loop of the system over-hot spots, and the power density scheduling performance of the system chip is maximized under this constraint, so as to ensure the system core. At the same time, chip throughput can effectively solve the problem of chip overheating. The experimental results show that the proposed algorithm increases the system chip throughput by about 11%, improves the system throughput loss, and achieves a balance between the system chip power consumption and scheduling time.


2018 ◽  
Vol 396 ◽  
pp. 527-532 ◽  
Author(s):  
David Peralta ◽  
Jérémie Salomon ◽  
Jean-François Colin ◽  
Adrien Boulineau ◽  
Frédéric Fabre ◽  
...  

2019 ◽  
Vol 43 (30) ◽  
pp. 11959-11967 ◽  
Author(s):  
Nadeem Hussain ◽  
Fangfang Wu ◽  
Waqar Younas ◽  
Liqiang Xu

A stable hollow sphere NaNiF3//AC device with ultra-high energy and power density.


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