Heat exchangers—theory and practice, J. Taborek, G. F. Hewitt, and N. Afgan, Editors Hemisphere Publishing Corp., Washington, D.C., 1983 992 pages,$69.95

AIChE Journal ◽  
1984 ◽  
Vol 30 (2) ◽  
pp. 350-350
Author(s):  
Robert W. Lyczkowski
Keyword(s):  
Heat Exchangers ◽  
Theory And Practice

scholarly journals Experimental Study for Counter to Cross Flow Air-cooled Heat Exchangerof Annular Tube having Internal Circular grooving at Different pitches - A Review

2020 ◽  
pp. 268-274
Author(s):  
Suneel Nagar ◽  
Ajay Singh ◽  
Deepak Patel
Keyword(s):  
Heat Exchanger ◽  
Heat Exchangers ◽  
Cross Flow ◽  
Operating Conditions ◽  
Theory And Practice ◽  
Thermal Flow ◽  
Total Cost ◽  
Literature Theory ◽  
Modern Analytical ◽  
Annular Tube

The objective of this study is to provide modern analytical and empirical tools for evaluation of the thermal-flow performance or design of air-cooled heat exchangers (ACHE) and cooling towers. This review consist various factors which effect the performance of ACHE. We introduced systematically to the literature, theory, and practice relevant to the performance evaluation and design of industrial cooling. Its provide better understanding of the performance characteristics of a heat exchanger, effectiveness can be improved in different operating conditions .The total cost of cycle can be reduced by increasing the effectiveness of heat exchanger.

Heat Exchangers—Theory and Practice

1984 ◽  
Vol 65 (1) ◽  
pp. 170-171
Author(s):  
Warren M. Rohsenow
Keyword(s):  
Heat Exchangers ◽  
Theory And Practice

Determination of creep mechanisms in various silicon carbides via TEM

1986 ◽  
Vol 44 ◽  
pp. 484-487
Author(s):  
C. H. Carter ◽  
J. E. Lane ◽  
J. Bentley ◽  
R. F. Davis
Keyword(s):  
Heat Exchangers ◽  
Sintered Material ◽  
Polycrystalline Material ◽  
Chemical Vapor ◽  
Graphite Substrate ◽  
Second Phase ◽  
Reaction Bonding ◽  
Creep Mechanisms ◽  
Porous Sic

Silicon carbide (SiC) is the generic name for a material which is produced and fabricated by a number of processing routes. One of the three SiC materials investigated at NCSU is Norton Company's NC-430, which is produced by reaction-bonding of Si vapor with a porous SiC host which also contains free C. The Si combines with the free C to form additional SiC and a second phase of free Si. Chemical vapor deposition (CVD) of CH3SiCI3 onto a graphite substrate was employed to produce the second SiC investigated. This process yielded a theoretically dense polycrystalline material with highly oriented grains. The third SiC was a pressureless sintered material (SOHIO Hexoloy) which contains B and excess C as sintering additives. These materials are candidates for applications such as components for gas turbine, adiabatic diesel and sterling engines, recouperators and heat exchangers.

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