Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture)
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2015 ◽
Vol 87
(4)
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pp. 1133-1138
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2015 ◽
Vol 29
(32)
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pp. 1530015
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1994 ◽
2015 ◽
Vol 54
(27)
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pp. 7764-7769
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2016 ◽
Vol 57
(3)
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pp. 305-311
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1995 ◽
Vol 34
(Part 1, No. 2B)
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pp. 1190-1193
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2021 ◽
Vol 640
(3)
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pp. 032006
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