Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

2016 ◽  
Vol 186 (5) ◽  
pp. 518-523
Author(s):  
Hiroshi Amano
1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2112-L2114 ◽  
Author(s):  
Hiroshi Amano ◽  
Masahiro Kito ◽  
Kazumasa Hiramatsu ◽  
Isamu Akasaki

2021 ◽  
Vol 640 (3) ◽  
pp. 032006
Author(s):  
U A Bliznyuk ◽  
P Yu Borchegovskaya ◽  
A P Chernyaev ◽  
V S Ipatova ◽  
V A Leontiev ◽  
...  

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