Polymer bilayers with enhanced dielectric permittivity and low dielectric losses by Maxwell–Wagner–Sillars interfacial polarization: Characteristic frequencies and scaling laws

2019 ◽  
pp. 47551 ◽  
Author(s):  
M. Samet ◽  
A. Kallel ◽  
A. Serghei
Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4017
Author(s):  
Dorota Szwagierczak ◽  
Beata Synkiewicz-Musialska ◽  
Jan Kulawik ◽  
Norbert Pałka

New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. The sintering behavior, composition, microstructure, and dielectric properties of the ceramics were investigated using a heating microscope, X-ray diffractometry, scanning electron microscopy, energy dispersive spectroscopy, and terahertz time domain spectroscopy. The studies revealed a low dielectric permittivity of 5.1–6.7 and low dielectric loss in the frequency range 0.14–0.7 THz. The copper borate-based materials, owing to a low sintering temperature of 900–960 °C, are suitable for LTCC (low temperature cofired ceramics) applications.


2009 ◽  
Vol 52 (6) ◽  
pp. 673-675
Author(s):  
D. A. Loik ◽  
A. V. Mamontov ◽  
I. V. Nazarov ◽  
V. N. Nefedov ◽  
T. A. Potapova

2020 ◽  
Vol 4 (3) ◽  
pp. 137
Author(s):  
Gayaneh Petrossian ◽  
Nahal Aliheidari ◽  
Amir Ameli

Ternary composites of flexible thermoplastic polyurethane (TPU), lead zirconate titanate (PZT), and multiwalled carbon nanotubes (MWCNTs) with very high dielectric permittivity (εr) and low dielectric loss (tan δ) are reported. To assess the evolution of dielectric properties with the interactions between conductive and dielectric fillers, composites were designed with a range of content for PZT (0–30 vol%) and MWCNT (0–1 vol%). The microstructure was composed of PZT-rich and segregated MWCNT-rich regions, which could effectively prevent the formation of macroscopic MWCNT conductive networks and thus reduce the high ohmic loss. Therefore, εr increased by a maximum of tenfold, reaching up to 166 by the addition of up to 1 vol% MWCNT to TPU/PZT. More importantly, tan δ remained relatively unchanged at 0.06–0.08, a similar range to that of pure TPU. εr/tan δ ratio reached 2870 at TPU/30 vol% PZT/0.5 vol% MWCNT, exceeding most of the reported values. This work demonstrates the potential of three-phase polymer/conductive filler/dielectric filler composites for efficient charge storage applications.


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