ChemInform Abstract: Dielectric Properties of Sb2O3 Thin Film Capacitors.

ChemInform ◽  
1990 ◽  
Vol 21 (33) ◽  
Author(s):  
J. S. KUMAR ◽  
U. V. S. RAO
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Thin Film Capacitors

Dielectric Properties of Zr–Al Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films

2010 ◽  
Vol 49 (10) ◽  
pp. 101501
Author(s):  
Hidefumi Kimizaki ◽  
Satoko Shinkai ◽  
Katsutaka Sasaki ◽  
Hideto Yanagisawa ◽  
Misao Yamane ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Alloy Films ◽  
Thin Film Capacitors ◽  
Zr Alloy

Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors

2008 ◽  
Vol 92 (12) ◽  
pp. 122903 ◽  
Author(s):  
Guo-Zhen Liu ◽  
Can Wang ◽  
Chun-Chang Wang ◽  
Jie Qiu ◽  
Meng He ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Interfacial Polarization ◽  
Bifeo3 Thin Film ◽  
Thin Film Capacitors

Dielectric properties of Sb2O3 thin film capacitors

1990 ◽  
Vol 160 (2) ◽  
pp. 381-386 ◽  
Author(s):  
J.Siva Kumar ◽  
U.V.Subba Rao
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Thin Film Capacitors

scholarly journals An Experimental Investigation of the Dielectric Properties of Thermally Evaporated Rare Earth Oxides for Use in Thin Film Capacitors

1976 ◽  
Vol 3 (1) ◽  
pp. 51-62 ◽  
Author(s):  
A. T. Fromhold, Jr. ◽  
W. D. Foster
Keyword(s):  
Thin Film ◽  
Experimental Investigation ◽  
Rare Earth ◽  
Dielectric Properties ◽  
Dielectric Breakdown ◽  
Rare Earth Oxides ◽  
Dielectric Constants ◽  
Thin Film Capacitors ◽  
Aluminum Electrodes ◽  
Experimental Survey

An experimental survey of rare earth oxides for use in thin film capacitors has been completed. Dielectric properties measured at 300°K are reported for thermally evaporated oxides 300 to 6000 Å in thickness of the metals, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Yb, Y, Sc, and also, V. Thin evaporated aluminum electrodes were utilized to impress voltages in the range zero to 75 V across the oxide layers. Dielectric breakdown strengths in excess of 5 × 106V/cm were observed. Relative dielectric constants measured for the oxides range from two to twenty, and measured capacitances were as high as 156 × 10−9F/cm2. The oxides of Ce, La, Nd, Gd, Pr, and Er show the most promise as potential materials for use in thin film capacitors.

Dielectric properties of terbium fluoride thin film capacitors

1980 ◽  
Vol 74 (2) ◽  
pp. 189-195 ◽  
Author(s):  
K.R. Paramasivam ◽  
M. Radhakrishnan ◽  
C. Balasubramanian
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Thin Film Capacitors

Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors

2009 ◽  
Author(s):  
M. D. Nguyen ◽  
R. J. A. Steenwelle ◽  
P. M. te Riele ◽  
J. M. Dekkers ◽  
D. H. A. Blank ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Thin Film Capacitors
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