scholarly journals Front Cover: Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications (ChemPhotoChem 1/2020)

ChemPhotoChem ◽  
2019 ◽  
Vol 4 (1) ◽  
pp. 1-1
Author(s):  
Xianhui Huang ◽  
Deyang Ji ◽  
Harald Fuchs ◽  
Wenping Hu ◽  
Tao Li
Keyword(s):  
Recent Progress ◽  
Semiconductor Materials ◽  
Front Cover ◽  
Device Structures ◽  
Optoelectronic Applications

Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

ChemPhotoChem ◽  
2019 ◽  
Vol 4 (1) ◽  
pp. 9-38 ◽  
Author(s):  
Xianhui Huang ◽  
Deyang Ji ◽  
Harald Fuchs ◽  
Wenping Hu ◽  
Tao Li
Keyword(s):  
Recent Progress ◽  
Semiconductor Materials ◽  
Device Structures ◽  
Optoelectronic Applications

scholarly journals Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

ChemPhotoChem ◽  
2019 ◽  
Vol 4 (1) ◽  
pp. 3-3 ◽  
Author(s):  
Xianhui Huang ◽  
Deyang Ji ◽  
Harald Fuchs ◽  
Wenping Hu ◽  
Tao Li
Keyword(s):  
Recent Progress ◽  
Semiconductor Materials ◽  
Device Structures ◽  
Optoelectronic Applications

CONDUCTIVE COPPER SULFIDE THIN FILMS ON POLYIMIDE FOILS FOR OPTICAL AND OPTOELECTRONIC APPLICATIONS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 774-777 ◽  
Author(s):  
J. CARDOSO ◽  
O. GOMEZ-DAZA ◽  
L. IXTLILCO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Copper Sulfide ◽  
Optoelectronic Device ◽  
Infrared Reflectance ◽  
Thermally Stable ◽  
Conductive Coatings ◽  
Device Structures ◽  
Conductive Substrates ◽  
Optoelectronic Applications

Copper sulfide thin films of 75 nm and 100 nm thickness were coated on Kapton foils (PI) of 25 nm thickness by floating them on a chemical bath. The foils were annealed at 150°C-400°C in N 2 converting the coating from CuS to Cu 1.8 S . The sheet resistance of the annealed coatings (100 nm) is 10-50 ohms/square which is almost unaltered after immersion in dilute HCl for 30-120 min. The infrared reflectance predicted for the coatings is 67%-77% at a wavelength 2.5 μm, which is nearly what is experimentally observed. The coated PI has a transmittance (25-35%) peak located around 550-600 nm. These thermally stable conductive coatings on PI foils might be used as conductive substrates for optoelectronic device structures.

scholarly journals Front Cover Picture: Recent Progress in the Radical Chemistry of Alkylborates and Alkylboronates (Adv. Synth. Catal. 15/2018)

2018 ◽  
Vol 360 (15) ◽  
pp. 2779-2779
Author(s):  
Ke Duan ◽  
Xuefeng Yan ◽  
Yongjun Liu ◽  
Zhaodong Li
Keyword(s):  
Recent Progress ◽  
Front Cover ◽  
Radical Chemistry

scholarly journals Front Cover: The Synthesis and Optoelectronic Applications for Tellurophene‐Based Small Molecules and Polymers (ChemPhysChem 20/2019)

ChemPhysChem ◽  
2019 ◽  
Vol 20 (20) ◽  
pp. 2577-2577
Author(s):  
Xiaoxi Wu ◽  
Lei Lv ◽  
Lifang Hu ◽  
Qinqin Shi ◽  
Aidong Peng ◽  
...  
Keyword(s):  
Small Molecules ◽  
Front Cover ◽  
Optoelectronic Applications

Impact of Molecular Dynamics Simulations on Research and Development of Semiconductor Materials

MRS Advances ◽  
2019 ◽  
Vol 4 (61-62) ◽  
pp. 3381-3398
Author(s):  
Xiaowang Zhou
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Recent Progress ◽  
Defect Formation ◽  
Atomic Scale ◽  
Semiconductor Materials ◽  
Formation Mechanisms ◽  
Graphene Growth ◽  
First Case ◽  
Dynamics Simulations

ABSTRACTAtomic scale defects critically limit performance of semiconductor materials. To improve materials, defect effects and defect formation mechanisms must be understood. In this paper, we demonstrate multiple examples where molecular dynamics simulations have effectively addressed these issues that were not well addressed in prior experiments. In the first case, we report our recent progress on modelling graphene growth, where we found that defects in graphene are created around periphery of islands throughout graphene growth, not just in regions where graphene islands impinge as believed previously. In the second case, we report our recent progress on modelling TlBr, where we discovered that under an electric field, edge dislocations in TlBr migrate in both slip and climb directions. The climb motion ejects extensive vacancies that can cause the rapid aging of the material seen in experiments. In the third case, we discovered that the growth of InGaN films on (0001) surfaces suffers from a serious polymorphism problem that creates enormous amounts of defects. Growth on ($11\bar{2}0$) surfaces, on the other hand, results in single crystalline wurtzite films without any of these defects. In the fourth case, we first used simulations to derive dislocation energies that do not possess any noticeable statistical errors, and then used these error-free methods to discover possible misuse of misfit dislocation theory in past thin film studies. Finally, we highlight the significance of molecular dynamics simulations in reducing defects in the design space of nanostructures.

scholarly journals Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

2021 ◽  
Author(s):  
Jingshu Zhou ◽  
Kaiyao Xin ◽  
Xiangkai Zhao ◽  
Dongmei Li ◽  
Zhongming Wei ◽  
...  
Keyword(s):  
Recent Progress ◽  
Optoelectronic Applications ◽  
Silicon Based
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