scholarly journals Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

ChemPhotoChem ◽  
2019 ◽  
Vol 4 (1) ◽  
pp. 3-3 ◽  
Author(s):  
Xianhui Huang ◽  
Deyang Ji ◽  
Harald Fuchs ◽  
Wenping Hu ◽  
Tao Li
Keyword(s):  
Recent Progress ◽  
Semiconductor Materials ◽  
Device Structures ◽  
Optoelectronic Applications

Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

ChemPhotoChem ◽  
2019 ◽  
Vol 4 (1) ◽  
pp. 9-38 ◽  
Author(s):  
Xianhui Huang ◽  
Deyang Ji ◽  
Harald Fuchs ◽  
Wenping Hu ◽  
Tao Li
Keyword(s):  
Recent Progress ◽  
Semiconductor Materials ◽  
Device Structures ◽  
Optoelectronic Applications

CONDUCTIVE COPPER SULFIDE THIN FILMS ON POLYIMIDE FOILS FOR OPTICAL AND OPTOELECTRONIC APPLICATIONS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 774-777 ◽  
Author(s):  
J. CARDOSO ◽  
O. GOMEZ-DAZA ◽  
L. IXTLILCO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Copper Sulfide ◽  
Optoelectronic Device ◽  
Infrared Reflectance ◽  
Thermally Stable ◽  
Conductive Coatings ◽  
Device Structures ◽  
Conductive Substrates ◽  
Optoelectronic Applications

Copper sulfide thin films of 75 nm and 100 nm thickness were coated on Kapton foils (PI) of 25 nm thickness by floating them on a chemical bath. The foils were annealed at 150°C-400°C in N 2 converting the coating from CuS to Cu 1.8 S . The sheet resistance of the annealed coatings (100 nm) is 10-50 ohms/square which is almost unaltered after immersion in dilute HCl for 30-120 min. The infrared reflectance predicted for the coatings is 67%-77% at a wavelength 2.5 μm, which is nearly what is experimentally observed. The coated PI has a transmittance (25-35%) peak located around 550-600 nm. These thermally stable conductive coatings on PI foils might be used as conductive substrates for optoelectronic device structures.

Impact of Molecular Dynamics Simulations on Research and Development of Semiconductor Materials

MRS Advances ◽  
2019 ◽  
Vol 4 (61-62) ◽  
pp. 3381-3398
Author(s):  
Xiaowang Zhou
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Recent Progress ◽  
Defect Formation ◽  
Atomic Scale ◽  
Semiconductor Materials ◽  
Formation Mechanisms ◽  
Graphene Growth ◽  
First Case ◽  
Dynamics Simulations

ABSTRACTAtomic scale defects critically limit performance of semiconductor materials. To improve materials, defect effects and defect formation mechanisms must be understood. In this paper, we demonstrate multiple examples where molecular dynamics simulations have effectively addressed these issues that were not well addressed in prior experiments. In the first case, we report our recent progress on modelling graphene growth, where we found that defects in graphene are created around periphery of islands throughout graphene growth, not just in regions where graphene islands impinge as believed previously. In the second case, we report our recent progress on modelling TlBr, where we discovered that under an electric field, edge dislocations in TlBr migrate in both slip and climb directions. The climb motion ejects extensive vacancies that can cause the rapid aging of the material seen in experiments. In the third case, we discovered that the growth of InGaN films on (0001) surfaces suffers from a serious polymorphism problem that creates enormous amounts of defects. Growth on ($11\bar{2}0$) surfaces, on the other hand, results in single crystalline wurtzite films without any of these defects. In the fourth case, we first used simulations to derive dislocation energies that do not possess any noticeable statistical errors, and then used these error-free methods to discover possible misuse of misfit dislocation theory in past thin film studies. Finally, we highlight the significance of molecular dynamics simulations in reducing defects in the design space of nanostructures.

scholarly journals Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

2021 ◽  
Author(s):  
Jingshu Zhou ◽  
Kaiyao Xin ◽  
Xiangkai Zhao ◽  
Dongmei Li ◽  
Zhongming Wei ◽  
...  
Keyword(s):  
Recent Progress ◽  
Optoelectronic Applications ◽  
Silicon Based

New semiconductor materials and structures for electro-optical devices

1985 ◽  
Vol 63 (6) ◽  
pp. 801-810
Author(s):  
B. K. Garside ◽  
P. E. Jessop
Keyword(s):  
Thin Film ◽  
Integrated Optics ◽  
Optical Communications ◽  
Optical Computing ◽  
Optical Devices ◽  
Semiconductor Materials ◽  
Current Status ◽  
Low Loss ◽  
Device Structures ◽  
Semiconductor Alloy

New semiconductor materials and device structures are essential to the development of new types of electro-optical devices and systems in areas such as integrated optics, optical communications, and optical computing. This paper presents a discussion of basic materials requirements, in terms of both optical properties and materials fabrication technologies, for representative electro-optical devices. In the area of optical communications, interest is shifting towards longer wavelengths, which generates the need for sources and detectors operating in the same region. The current status and future possibilities for such devices, as examplified by fast photodetectors, are discussed in terms of new semiconductor alloy materials and device structures. In the areas of optical computing and integrated optics, the basic essential structure is a low-loss optical thin-film waveguide. The materials aspects of such devices are discussed, and the relevant considerations are illustrated through a description of recent work with GeO2 waveguides.

Diarylfluorene‐Based Organic Semiconductor Materials toward Optoelectronic Applications

2021 ◽  
pp. 2105092
Author(s):  
Yamin Han ◽  
Lubing Bai ◽  
Jinyi Lin ◽  
Xuehua Ding ◽  
Linghai Xie ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Materials ◽  
Organic Semiconductor Materials ◽  
Optoelectronic Applications

scholarly journals Modeling Nonlinear and Chaotic Dynamics in Semiconductor Device Structures

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 321-329 ◽  
Author(s):  
Eckehard Schöll
Keyword(s):  
Electrical Transport ◽  
Chaotic Dynamics ◽  
Recent Progress ◽  
Semiconductor Device ◽  
Hot Electron ◽  
Layered Semiconductor ◽  
Semiconductor Structures ◽  
Device Structures ◽  
Spatio Temporal ◽  
Current Filaments

We review the modeling and simulation of electrical transport instabilities in semiconductors with a special emphasis on recent progress in the application to semiconductor microstructures. The following models are treated in detail: (i) The dynamics of current filaments in the regime of low-temperature impurity breakdown is studied. In particular we perform 2D simulations of the nascence of a filament upon application of a bias voltage. (ii) Vertical electrical transport in layered semiconductor structures like the heterostructure hot electron diode is considered. Periodic as well as chaotic spatio-temporal spiking of the current is obtained. In particular we find long transients of spatio-temporal chaos preceding regular spiking.

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