Thermochemical analysis of native point defects and substitutional carbon and boron in GaAs crystal growth

Grown-in dislocations in GaAs have been a major obstacle in utilizing this material for the potential electronic devices. Although it has been proposed in many reports that supersaturation of point defects can generate dislocation loops in growing crystals and can be a main formation mechanism of grown-in dislocations, there are very few reports on either the observation or the structural analysis of the stoichiometry-generated loops. In this work, dislocation loops in an arsenic-rich GaAs crystal have been studied by transmission electron microscopy.The single crystal with high arsenic concentration was grown using the Horizontal Bridgman method. The arsenic source temperature during the crystal growth was about 630°C whereas 617±1°C is normally believed to be optimum one to grow a stoichiometric compound. Samples with various orientations were prepared either by chemical thinning or ion milling and examined in both a JEOL JEM 200CX and a Siemens Elmiskop 102.

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Stability and mobility of native point defects in AlH3

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2010.10.014 ◽

2011 ◽

Vol 509 ◽

pp. S658-S661 ◽

Cited By ~ 4

Author(s):

Lars Ismer ◽

Anderson Janotti ◽

Chris G. Van de Walle

Keyword(s):

Point Defects ◽

Native Point Defects

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Hg1-xCdxTe: Defect Structure Overview

MRS Proceedings ◽

10.1557/proc-216-3 ◽

1990 ◽

Vol 216 ◽

Cited By ~ 7

Author(s):

M.A. Berding ◽

A. Sher ◽

A.-B. Chen

Keyword(s):

Point Defects ◽

Defect Structure ◽

Defect Formation ◽

Activation Energies ◽

Mass Action ◽

Native Defect ◽

Native Point Defects ◽

Vacancy Migration ◽

Formation Energies ◽

Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

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GaAs crystal growth from coordination compounds using the organometallic chemical vapor deposition process for solar cells

Solar & Wind Technology ◽

10.1016/0741-983x(86)90044-5 ◽

1986 ◽

Vol 3 (1) ◽

pp. 21-25

Author(s):

A. Zaouk ◽

G. Constant

Keyword(s):

Solar Cells ◽

Chemical Vapor Deposition ◽

Crystal Growth ◽

Vapor Deposition ◽

Coordination Compounds ◽

Chemical Vapor ◽

Deposition Process ◽

Chemical Vapor Deposition Process ◽

Gaas Crystal ◽

Vapor Deposition Process

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Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.717 ◽

2006 ◽

Vol 527-529 ◽

pp. 717-720 ◽

Cited By ~ 1

Author(s):

Sashi Kumar Chanda ◽

Yaroslav Koshka ◽

Murugesu Yoganathan

Keyword(s):

Low Temperature ◽

Point Defects ◽

Room Temperature ◽

Vanadium Content ◽

Mapping Technique ◽

Native Defect ◽

Room Temperature Photoluminescence ◽

Native Point Defects ◽

Pl Mapping ◽

Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

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