Improving SEM Inspection Performance in Semiconductor Manufacturing Industry

2012 ◽  
Vol 24 (1) ◽  
pp. 124-129 ◽  
Author(s):  
Chih-Long Lin ◽  
Fu-Sheng Chen ◽  
Li-Jen Twu ◽  
Mao-Jiun J. Wang
Keyword(s):  
Semiconductor Manufacturing ◽  
Manufacturing Industry ◽  
Inspection Performance

Developing a causal model to evaluate the critical issues in reverse supply chain implementation

2018 ◽  
Vol 25 (7) ◽  
pp. 1992-2017 ◽  
Author(s):  
Kaustov Chakraborty ◽  
Sandeep Mondal ◽  
Kampan Mukherjee
Keyword(s):  
Supply Chain ◽  
Semiconductor Manufacturing ◽  
Manufacturing Industry ◽  
Causal Model ◽  
Market Competition ◽  
Reverse Supply Chain ◽  
Causal Relations ◽  
Content Type ◽  
Critical Issues ◽  
Practical Implications

Purpose Approximately, 800m tons of e-waste is generated per year in India. Reverse supply chain (RSC) is the probable strategy to cope up with the issue. Setting up a RSC process is not popular in the Indian sector. There are several factors that basically control the profitability of such kind of business. Hence, the purpose of this paper is to develop a causal model among the identified issues and sub-issues for setting up a RSC in an Indian semiconductor manufacturing industry and then evaluate the critical issues based on the causal relations. Design/methodology/approach Decision-making trial and evaluation laboratory (DEMATEL) method along fuzzy set theory is used to develop the causal framework among the identified strategical and tactical issues. According to the causal relations from DEMATEL, analytical network process is then used to identify the weights of the sub-issues. Findings The cause–effect interactions among the main issues show that legislations and regulations, market-related issues and organizational issue are the most significant strategic issues. Uncertainty in the acquisition time is the most significant tactical issue because it has a crucial impact on the quality and quantity of the used products. Based on the obtained causal relations of the main issues, it is identified that the reduction of waste, creation of new opportunity, market competition, cost reduction, change in technology and location, capacity and number of recovery facility are the major sub-issues in RSC implementation. Practical implications This study is conducted on the basis of the experts’ opinion from a semiconductor manufacturing industry, situated in the southern part of India. Therefore, this proves its practical implications. Originality/value The paper provides the detail illustration of the issues in the RSC process, and the prioritization of the issues based on the cause–effect relationships also provides some meaningful managerial insights.

scholarly journals Outliers Detection Models in Shewhart Control Charts; an Application in Photolithography: A Semiconductor Manufacturing Industry

Mathematics ◽  
2020 ◽  
Vol 8 (5) ◽  
pp. 857 ◽  
Author(s):  
Ishaq Adeyanju Raji ◽  
Muhammad Hisyam Lee ◽  
Muhammad Riaz ◽  
Mu’azu Ramat Abujiya ◽  
Nasir Abbas
Keyword(s):  
Phase I ◽  
Outlier Detection ◽  
Control Charts ◽  
Semiconductor Manufacturing ◽  
Manufacturing Industry ◽  
Estimation Errors ◽  
Run Length ◽  
Shewhart Control Charts ◽  
Shewhart Control ◽  
Control Limits

Shewhart control charts with estimated control limits are widely used in practice. However, the estimated control limits are often affected by phase-I estimation errors. These estimation errors arise due to variation in the practitioner’s choice of sample size as well as the presence of outlying errors in phase-I. The unnecessary variation, due to outlying errors, disturbs the control limits implying a less efficient control chart in phase-II. In this study, we propose models based on Tukey and median absolute deviation outlier detectors for detecting the errors in phase-I. These two outlier detection models are as efficient and robust as they are distribution free. Using the Monte-Carlo simulation method, we study the estimation effect via the proposed outlier detection models on the Shewhart chart in the normal as well as non-normal environments. The performance evaluation is done through studying the run length properties namely average run length and standard deviation run length. The findings of the study show that the proposed design structures are more stable in the presence of outlier detectors and require less phase-I observation to stabilize the run-length properties. Finally, we implement the findings of the current study in the semiconductor manufacturing industry, where a real dataset is extracted from a photolithography process.

Effects of Chamber Pressure on the Performance of CO2 Beam Cleaning

2014 ◽  
Vol 219 ◽  
pp. 131-133
Author(s):  
Seung Ho Kim ◽  
Joong Ha Lee ◽  
Ho Young Kim
Keyword(s):  
Semiconductor Manufacturing ◽  
Manufacturing Industry ◽  
Supersonic Nozzle ◽  
Solid Particles ◽  
Chamber Pressure ◽  
Megasonic Cleaning ◽  
Functional Patterns ◽  
Induce Pattern ◽  
Cleaning Methods ◽  
The Cost

As the size of functional patterns in the semiconductor chips shrinks down to below 100 nm, removing nanoscale contaminant particles is an important technological challenge that the current semiconductor manufacturing industry must overcome. Several cleaning methods proposed to date, such as megasonic cleaning [1], droplet impact [2], and cryogenic aerosol cleaning [3], have difficulties in cleaning of sub-100 nm contaminant particles, let alone their tendency to induce pattern damages. Kim et al. [4] has recently developed a new method, where CO2 solid particles nucleated from a supersonic nozzle physically attack contaminant nanoscale particles on the wafer, thus detaching them. A drawback of this novel scheme is that the cleaning must be executed in vacuum because CO2 gas needs to sublimate into solid and be accelerated supersonically as exiting the nozzle. This has adverse effects on the cost and rate of the semiconductor manufacturing process. Here we investigate the effects of vacuum chamber pressure on the performance of the CO2 dry cleaning system. We observe the cryogenic CO2 beams, dents induced by CO2 solid particles, and wafer surfaces initially contaminated with cerium oxide particles, which indicate the effects of the chamber pressure.

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