Simultaneous noise and input matched ultra wide band LNA design

2007 ◽  
Vol 49 (9) ◽  
pp. 2275-2279 ◽  
Author(s):  
Yuna Shim ◽  
Chang-Wan Kim ◽  
Sang-Gug Lee
Keyword(s):  
2012 ◽  
Vol 66 (2) ◽  
pp. 157-161 ◽  
Author(s):  
Chen Lei ◽  
Shi Chunqi ◽  
Zhang Runxi ◽  
Ruan Ying ◽  
Lai Zongsheng

2019 ◽  
Vol 8 (2) ◽  
pp. 2406-2410

An Ultra-Wide Band (UWB) Low Noise Amplifier (LNA) is affective in deciding the chip size and in the implementation cost at Radio Frequency applications. The proposed LNA design with an active inductor is a different solution to trounce the habit of passive inductors to cut the chip area. Designed in 90-nm CMOS process, a voltage gain of 9dB to 15.5dB for a supply voltage of 0.9v to 1.8V with a smallest Noise Figure (NF) of 5.7dB is achieved by the LNA, with low power utilization and at 2.40 GHz, with 345um2 of chip area.


Author(s):  
Arijit Chowdhury ◽  
Taniya Das ◽  
Smriti Rani ◽  
Anwesha Khasnobish ◽  
Tapas Chakravarty

Author(s):  
Yu.V. Andreyev ◽  
◽  
L.V. Kuzmin ◽  
M.G. Popov ◽  
A.I. Ryshov ◽  
...  

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