A simulation study towards a new concept for realization of thin film triple junction solar cells based on group IV elements

2011 ◽  
Vol 20 (1) ◽  
pp. 74-81 ◽  
Author(s):  
C. Feser ◽  
J. Lacombe ◽  
K. v. Maydell ◽  
C. Agert
2021 ◽  
pp. 2100603
Author(s):  
Min Qian ◽  
Xiaojun Mao ◽  
Min Wu ◽  
Zhangyi Cao ◽  
Qing Liu ◽  
...  

Author(s):  
Naoya Miyashita ◽  
Nazmul Ahsan ◽  
Yoshitaka Okada ◽  
Rao Tatavarti ◽  
Andree Wibowo ◽  
...  

2013 ◽  
Vol 23 (1) ◽  
pp. 94-105 ◽  
Author(s):  
Julia P Ostertag ◽  
Ingo B Ramsteiner ◽  
Oliver Schmidt ◽  
Christian Wachtendorf ◽  
Rudolf Brüggemann

2006 ◽  
Vol 501 (1-2) ◽  
pp. 256-259 ◽  
Author(s):  
R.L. Stolk ◽  
H. Li ◽  
C.H.M. van der Werf ◽  
R.E.I. Schropp

2013 ◽  
Vol 750-752 ◽  
pp. 970-973
Author(s):  
Chun Rong Xue ◽  
Xia Yun Sun

High-efficiency solar cells based on amorphous silicon technology are designed. Multi-junction amorphous silicon solar cells are discussed, how these are made and how their performance can be understood and optimized. Although significant amount of work has been carried out in the last twenty-five years, the Staebler-Wronski effect has limited the development of a-Si:H solar cells. As an alternative material, nc-Si:H has attracted remarkable attention. Taking advantage of a lower degradation in nc-Si:H than a-Si:H and a-SiGe:H alloys, the light induced degradation in triple junction structures has been minimized by designing a bottom-cell-limited current mismatching, and obtained a stable active-area cell efficiency. All this has been investigated in this paper.


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