Determination of the minority carrier lifetime in crystalline silicon thin-film material

2012 ◽  
Vol 22 (2) ◽  
pp. 180-188 ◽  
Author(s):  
Dominic Walter ◽  
Philipp Rosenits ◽  
Bastian Berger ◽  
Stefan Reber ◽  
Wilhelm Warta
Keyword(s):  
Thin Film ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Film Material ◽  
Silicon Thin Film ◽  
Thin Film Material

High minority carrier lifetime in amorphous-crystalline silicon heterostructure using triode rf PECVD

2020 ◽  
Author(s):  
Pratish Mahtani ◽  
Sara M. Almenabawy ◽  
Rajiv Prinja ◽  
Geetu Sharma ◽  
Nazir P. Kherani
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime

Radiation damage and minority carrier lifetime in crystalline silicon

1991 ◽  
Vol 62 (1) ◽  
pp. 99-102 ◽  
Author(s):  
V.N. Bhoraskar ◽  
S.D. Dhole ◽  
Surjit Singh ◽  
S.M. Jahagirdar ◽  
K.S. Srinivas
Keyword(s):  
Radiation Damage ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime

Minority carrier lifetime scan map in crystalline silicon wafers

1999 ◽  
Vol 70 (10) ◽  
pp. 4044-4046 ◽  
Author(s):  
J. Gervais ◽  
O. Palais ◽  
L. Clerc ◽  
S. Martinuzzi
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Silicon Wafers

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

2013 ◽  
Vol 3 (4) ◽  
pp. 1319-1324 ◽  
Author(s):  
Darius Kuciauskas ◽  
Ana Kanevce ◽  
James M. Burst ◽  
Joel N. Duenow ◽  
Ramesh Dhere ◽  
...  
Keyword(s):  
Thin Film ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Two Photon ◽  
Photon Excitation ◽  
Lifetime Analysis ◽  
Two Photon Excitation

Minority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter Formation

2015 ◽  
Vol 242 ◽  
pp. 126-132 ◽  
Author(s):  
George Martins ◽  
Ruy S. Bonilla ◽  
Toby Burton ◽  
P. MacDonald ◽  
Peter R. Wilshaw
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
High Concentration ◽  
Production Methods ◽  
Cell Efficiency ◽  
Annealing Conditions ◽  
Maximum Lifetime ◽  
Current Production

In this work we use Saw Damage Gettering (SDG) in combination with emitter formation to improve the minority carrier lifetime of highly contaminated multi-crystalline silicon wafers. This process is applied to wafers from the bottom of ingots, commonly referred to as the “red zone”, which are currently discarded since their high concentration of impurities limits the efficiency of solar cells produced therefrom. SDG is a potentially simple technique designed to upgrade these wafers. In this technique, bulk impurities are dissolved via annealing. The wafers are then cooled which generates a super-saturation of impurities in solution. The system then relaxes through the formation of precipitates in the saw damaged region. SDG is shown to be enhanced when using a temperature dependent cooling rate which maximizes the flux of impurities to the saw damaged regions. In addition, these benefits were observed even after an additional gettering process occurring during an emitter formation procedure. The SDG annealing conditions required to achieve the maximum lifetime were altered by the introduction of the emitter formation process. The enhancement generated by the SDG process may be sufficient to enable red-zone wafers to be processed is the same manner as higher quality no-red zone wafer wafers without adversely affecting the resultant cell efficiency. Due to its simplicity, it is expected that SDG can easily be incorporated into current production methods.

Minority Carrier Lifetime Behavior in Crystalline Silicon in Rapid Laser Heating

2012 ◽  
Vol 51 ◽  
pp. 03CA04
Author(s):  
Toshiyuki Sameshima ◽  
Koichi Betsuin ◽  
Tomohisa Mizuno ◽  
Naoki Sano
Keyword(s):  
Laser Heating ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime

Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method

2018 ◽  
Vol 39 (4) ◽  
pp. 552-555 ◽  
Author(s):  
Maitreya Dutta ◽  
Saptarshi Mandal ◽  
Raghuraj Hathwar ◽  
Alec M. Fischer ◽  
Franz A. M. Koeck ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Recovery Method
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