In this work we use Saw Damage Gettering (SDG) in combination with emitter formation to improve the minority carrier lifetime of highly contaminated multi-crystalline silicon wafers. This process is applied to wafers from the bottom of ingots, commonly referred to as the “red zone”, which are currently discarded since their high concentration of impurities limits the efficiency of solar cells produced therefrom. SDG is a potentially simple technique designed to upgrade these wafers. In this technique, bulk impurities are dissolved via annealing. The wafers are then cooled which generates a super-saturation of impurities in solution. The system then relaxes through the formation of precipitates in the saw damaged region. SDG is shown to be enhanced when using a temperature dependent cooling rate which maximizes the flux of impurities to the saw damaged regions. In addition, these benefits were observed even after an additional gettering process occurring during an emitter formation procedure. The SDG annealing conditions required to achieve the maximum lifetime were altered by the introduction of the emitter formation process. The enhancement generated by the SDG process may be sufficient to enable red-zone wafers to be processed is the same manner as higher quality no-red zone wafer wafers without adversely affecting the resultant cell efficiency. Due to its simplicity, it is expected that SDG can easily be incorporated into current production methods.
Investigation on the Impact of Metallic Surface Contaminations on Minority Carrier Lifetime of a-Si:H Passivated Crystalline Silicon
