scholarly journals Screen pattern simulation for an improved front‐side Ag‐electrode metallization of Si‐solar cells

2020 ◽  
Vol 28 (10) ◽  
pp. 1054-1062 ◽  
Author(s):  
Sebastian Tepner ◽  
Linda Ney ◽  
Michael Linse ◽  
Andreas Lorenz ◽  
Maximilian Pospischil ◽  
...  
Keyword(s):  
Solar Cells ◽  
Front Side ◽  
Ag Electrode ◽  
Si Solar Cells ◽  
Pattern Simulation

scholarly journals Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

2019 ◽  
Vol 9 (2) ◽  
pp. 346-354 ◽  
Author(s):  
Andrea Ingenito ◽  
Gizem Nogay ◽  
Josua Stuckelberger ◽  
Philippe Wyss ◽  
Luca Gnocchi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Solar Cells ◽  
Front Side ◽  
Si Solar Cells ◽  
Doped Silicon

Easy Plating—A Simple Approach to Suppress Parasitically Metallized Areas in Front Side Ni/Cu Plated Crystalline Si Solar Cells

2017 ◽  
Vol 7 (5) ◽  
pp. 1270-1277 ◽  
Author(s):  
Sven Kluska ◽  
Andreas Buchler ◽  
Jonas Bartsch ◽  
Benjamin Grubel ◽  
Andreas A. Brand ◽  
...  
Keyword(s):  
Solar Cells ◽  
Simple Approach ◽  
Front Side ◽  
Si Solar Cells

Microstructural characterization of front-side Ag contact of crystalline Si solar cells with lightly doped emitter

2012 ◽  
Author(s):  
Z. G. Li ◽  
K. R. Mikeska ◽  
L. Liang ◽  
A. Meisel ◽  
G. Scardera ◽  
...  
Keyword(s):  
Solar Cells ◽  
Microstructural Characterization ◽  
Front Side ◽  
Si Solar Cells ◽  
Ag Contact

scholarly journals Electroplated Al – An Alternative to Cu or Ag Electrode in Si Solar Cells

2019 ◽  
Author(s):  
Meng Tao
Keyword(s):  
Solar Cells ◽  
Ag Electrode ◽  
Si Solar Cells

Electron microscopy study of front-side Ag contact in crystalline Si solar cells

2009 ◽  
Vol 105 (6) ◽  
pp. 066102 ◽  
Author(s):  
Z. G. Li ◽  
L. Liang ◽  
L. K. Cheng
Keyword(s):  
Electron Microscopy ◽  
Solar Cells ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Front Side ◽  
Si Solar Cells ◽  
Ag Contact

scholarly journals Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping

2015 ◽  
Vol 77 ◽  
pp. 527-533 ◽  
Author(s):  
Izabela Kuzma-Filipek ◽  
Maria Recaman-Payo ◽  
Yuandong Li ◽  
Ali Hajjiah ◽  
Filip Duerinckx ◽  
...  
Keyword(s):  
Solar Cells ◽  
Front Side ◽  
Laser Doping ◽  
Si Solar Cells ◽  
Single Side

scholarly journals Analysis of the Bowing Phenomenon for Thin c-Si Solar Cells using Partially Processed c-Si Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1593 ◽  
Author(s):  
Jong Rok Lim ◽  
Sihan Kim ◽  
Hyung-Keun Ahn ◽  
Hee-Eun Song ◽  
Gi Hwan Kang
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Firing Process ◽  
Back Side ◽  
Front Side ◽  
Front Electrode ◽  
Si Solar Cell ◽  
Si Solar Cells ◽  
Wafer Thickness ◽  
The Relationship

The silicon wafers for solar cells on which the paste is deposited experience a bowing phenomenon. The thickness of commonly used c-Si wafers is 180 μm or more. When fabricating c-Si solar cells with this wafer thickness, the bowing value is 3 mm or less and the problem does not occur. However, for the thin c-Si solar cells which are being studied recently, the output reduction due to failure during manufacture and cracking are attributed to bowing. In generally, it is known that the bowing phenomenon arises mainly from the paste applied to the back side electrode of c-Si solar cells and the effects of SiNx (silicon nitride) and the paste on the front side are not considered significant. The bowing phenomenon is caused by a difference in the coefficient of expansion between heterogeneous materials, there is the effect of bowing on the front electrode and ARC. In this paper, a partially processed c-Si solar cell was fabricated and a bowing phenomenon variation according to the wafer thicknesses was confirmed. As a result of the experiment, the measured bow value after the firing process suggests that the paste on the front-side indicates a direction different from that of the back-side paste. The bow value increases when Al paste is deposited on SiNx. The fabricated c-Si solar cell was analyzed on basis of the correlation between the bowing phenomenon of the materials and the c-Si wafer using Stoney’s equation, which is capable of analyzing the relationship between bowing and stress. As a result, the bowing phenomenon of the c-Si solar cell estimated through the experiment that the back side electrode is the important element, but also the front electrode and ARC influence the bowing phenomenon when fabricating c-Si solar cells using thin c-Si wafers.

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