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High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate
phys stat sol (a)
◽
10.1002/pssa.200303537
◽
2003
◽
Vol 200
(1)
◽
pp. 187-190
◽
Cited By ~ 8
Author(s):
Hideyuki Okita
◽
Katsuaki Kaifu
◽
Juro Mita
◽
Tomoyuki Yamada
◽
Yoshiaki Sano
◽
...
Keyword(s):
Sapphire Substrate
◽
Gan Hemt
◽
High Transconductance
◽
Recessed Gate
Download Full-text
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References
Enhancement-mode quaternary AlInGaN/GaN HEMT with non-recessed-gate on sapphire substrate
Electronics Letters
◽
10.1049/el:20061150
◽
2006
◽
Vol 42
(15)
◽
pp. 884
◽
Cited By ~ 23
Author(s):
Y. Liu
◽
T. Egawa
◽
H. Jiang
Keyword(s):
Sapphire Substrate
◽
Enhancement Mode
◽
Gan Hemt
◽
Recessed Gate
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A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate
Journal of Semiconductors
◽
10.1088/1674-4926/32/12/124003
◽
2011
◽
Vol 32
(12)
◽
pp. 124003
◽
Cited By ~ 7
Author(s):
Bo Liu
◽
Zhihong Feng
◽
Sen Zhang
◽
Shaobo Dun
◽
Jiayun Yin
◽
...
Keyword(s):
Power Density
◽
Output Power
◽
Sapphire Substrate
◽
Gan Hemt
Download Full-text
Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
Superlattices and Microstructures
◽
10.1016/j.spmi.2021.107064
◽
2021
◽
pp. 107064
Author(s):
Jialin Li
◽
Yian Yin
◽
Ni Zeng
◽
Fengbo Liao
◽
Mengxiao Lian
◽
...
Keyword(s):
Gan Hemt
◽
Recessed Gate
Download Full-text
Simulation and experimental investigation of recessed-gate AlGaN/GaN HEMT
Acta Physica Sinica
◽
10.7498/aps.58.1966
◽
2009
◽
Vol 58
(3)
◽
pp. 1966
Author(s):
Wang Chong
◽
Quan Si
◽
Zhang Jin-Feng
◽
Hao Yue
◽
Feng Qian
◽
...
Keyword(s):
Experimental Investigation
◽
Gan Hemt
◽
Recessed Gate
Download Full-text
Insight to the 2DEG transport and mobility effects of a 20nm recessed gate InAlN/AlN/GaN HEMT
2014 International Conference on Electronics and Communication Systems (ICECS)
◽
10.1109/ecs.2014.6892645
◽
2014
◽
Author(s):
A. Bhattacharjee
◽
T. R. Lenka
Keyword(s):
Gan Hemt
◽
Recessed Gate
Download Full-text
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
IEEE Transactions on Electron Devices
◽
10.1109/ted.2005.862708
◽
2006
◽
Vol 53
(2)
◽
pp. 356-362
◽
Cited By ~ 310
Author(s):
W. Saito
◽
Y. Takada
◽
M. Kuraguchi
◽
K. Tsuda
◽
I. Omura
Keyword(s):
Power Electronics
◽
High Voltage
◽
Structure Approach
◽
Gan Hemt
◽
Gate Structure
◽
Recessed Gate
Download Full-text
Recessed gate Pt-AlGaN/GaN HEMT H2 sensor
2019 IEEE SENSORS
◽
10.1109/sensors43011.2019.8956797
◽
2019
◽
Author(s):
R. Sokolovskij
◽
J. Zhang
◽
H. Zheng
◽
W. Li
◽
Y. Jiang
◽
...
Keyword(s):
Gan Hemt
◽
H2 Sensor
◽
Recessed Gate
Download Full-text
Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate
2006 IEEE International Symposium on Power Semiconductor Devices & IC's
◽
10.1109/ispsd.2006.1666085
◽
2006
◽
Author(s):
M. Inada
◽
S. Yagi
◽
Y. Yamamoto
◽
Guanxi Piao
◽
M. Shimizu
◽
...
Keyword(s):
Sapphire Substrate
◽
Gan Hemt
Download Full-text
Recessed-gate enhancement-mode GaN HEMT with high threshold voltage
Electronics Letters
◽
10.1049/el:20050161
◽
2005
◽
Vol 41
(7)
◽
pp. 449
◽
Cited By ~ 154
Author(s):
W.B. Lanford
◽
T. Tanaka
◽
Y. Otoki
◽
I. Adesida
Keyword(s):
Threshold Voltage
◽
High Threshold
◽
Enhancement Mode
◽
Gan Hemt
◽
Recessed Gate
Download Full-text
AlGaN/GaN HEMT with 200 GHz fmax on sapphire substrate with InGaN back-barrier
JOURNAL OF INFRARED AND MILLIMETER WAVES
◽
10.3724/sp.j.1010.2011.00289
◽
2012
◽
Vol 30
(4)
◽
pp. 289-292
◽
Cited By ~ 3
Author(s):
Guo-Guo LIU
◽
Ke WEI
◽
Jun HUANG
◽
Xin-Yu LIU
◽
Jie-Bin NIU
Keyword(s):
Sapphire Substrate
◽
Gan Hemt
Download Full-text
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