Improved device performance of recessed-gate AlGaN/GaN HEMTs using by in-situ N2O radical treatment

In this work, the N2O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N2O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10-9 A/mm, high on/off current ratio of 108, and high fT×Lg of 13.44 GHz·μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.

Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics

Monolithic GaN High Electron Mobility Transistor (HEMT)-integrated circuits are a promising application of wide band-gap materials. To date, most GaN-based devices behave as NMOS-like transistors. As only NMOS GaN HEMT is currently commercially available, its control circuit requires special design if monolithic integration is desired. This article analyzes the schematics of a GaN-based comparator, and three comparator structures are compared through ADS simulation. The optimal structure with the bootstrapped technique is fabricated based on AlGaN/GaN Metal–Insulator–Semiconductor (MIS) HEMT with the recessed gate method. The comparator has excellent static characteristics when the reference voltage increases from 3 V to 8 V. Dynamic waveforms from 10 kHz to 1 MHz are also obtained. High-temperature tests from 25 °C to 250 °C are applied upon both DC and AC characteristics. The mechanisms of instability issues are explained under dynamic working condition. The results prove that the comparator can be used in the state-of-art mixed-signal circuits, demonstrating the potential for the monolithic all-GaN integrated circuits.