2006 IEEE International Symposium on Power Semiconductor Devices & IC's
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Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization

2006 ◽  
Author(s):  
A. Angelini ◽  
V. Camarchia ◽  
F. Cappelluti ◽  
S.D. Guerrieri ◽  
M. Pirola ◽  
...  
Keyword(s):  
Technology Development ◽  
Gan Hemt ◽  
Nonlinear Characterization

4 kV, 10 A Bipolar Junction Transistors in 4H-SiC

2006 ◽  
Author(s):  
S. Krishnaswami ◽  
A. Agarwal ◽  
J. Richmond ◽  
T.P. Chow ◽  
B. Geil ◽  
...  
Keyword(s):  
Bipolar Junction Transistors

Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate

2006 ◽  
Author(s):  
M. Inada ◽  
S. Yagi ◽  
Y. Yamamoto ◽  
Guanxi Piao ◽  
M. Shimizu ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Gan Hemt
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