2006 IEEE International Symposium on Power Semiconductor Devices & IC's
Latest Publications

TOTAL DOCUMENTS

106

(FIVE YEARS 0)

H-INDEX

14

(FIVE YEARS 0)

Published By IEEE

0780397142

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High Voltage (up to 20V) Devices Implementation in 0.13 um BiCMOS Process Technology for System-On-Chip (SOC) Design

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666143 ◽

2006 ◽

Author(s):

R. Pan ◽

B. Todd ◽

Pinghai Hao ◽

R. Higgins ◽

D. Robinson ◽

...

Keyword(s):

High Voltage ◽

System On Chip ◽

Process Technology ◽

Bicmos Process ◽

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A 15.5mΩcm>sup/sup<-680V Superjunction MOSFET Reduced On-Resistance by Lateral Pitch Narrowing

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666129 ◽

2006 ◽

Author(s):

W. Saito ◽

I. Omura ◽

S. Aida ◽

S. Koduki ◽

M. Izumisawa ◽

...

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Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666121 ◽

2006 ◽

Author(s):

N. Miura ◽

K. Fujihira ◽

Y. Nakao ◽

T. Watanabe ◽

Y. Tarui ◽

...

Keyword(s):

Successful Development

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4 kV, 10 A Bipolar Junction Transistors in 4H-SiC

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666128 ◽

2006 ◽

Author(s):

S. Krishnaswami ◽

A. Agarwal ◽

J. Richmond ◽

T.P. Chow ◽

B. Geil ◽

...

Keyword(s):

Bipolar Junction Transistors

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Modeling and Analysis of Metal Interconnect Resistance of Power MOSFETs with Ultra Low On-Resistance

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666067 ◽

2006 ◽

Author(s):

Y. Chen ◽

X. Cheng ◽

Y. Liu ◽

Y. Fu ◽

T.X. Wu ◽

...

Keyword(s):

Modeling And Analysis ◽

Power Mosfets ◽

Interconnect Resistance

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Evaluation of GaN HEMT Technology Development Through Nonlinear Characterization

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666082 ◽

2006 ◽

Author(s):

A. Angelini ◽

V. Camarchia ◽

F. Cappelluti ◽

S.D. Guerrieri ◽

M. Pirola ◽

...

Keyword(s):

Technology Development ◽

Gan Hemt ◽

Nonlinear Characterization

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Reverse Recovery in High Density Trench MOSFETs with Regard to the Body-Effect

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666076 ◽

2006 ◽

Author(s):

T. Lopez ◽

R. Elferich ◽

N. Koper

Keyword(s):

High Density ◽

The Body ◽

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Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666064 ◽

2006 ◽

Author(s):

M. Rahimo ◽

A. Kopta ◽

S. Linder

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Low Specific On-Resistance AlGaN/GaN HEMT on Sapphire Substrate

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666085 ◽

2006 ◽

Author(s):

M. Inada ◽

S. Yagi ◽

Y. Yamamoto ◽

Guanxi Piao ◽

M. Shimizu ◽

...

Keyword(s):

Sapphire Substrate ◽

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TherMos>sup/sup<: a 3D electrothermal simulator for Smart Power Devices

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666109 ◽

2006 ◽

Author(s):

A. Irace ◽

G. Breglio ◽

P. Spirito

Keyword(s):

Power Devices ◽

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