Selective-area growth and fabrication of recessed-gate GaN MESFET using plasma-assisted molecular beam epitaxy
2006 ◽
Vol 203
(7)
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pp. 1872-1875
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1995 ◽
Vol 156
(1-2)
◽
pp. 1-10
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2002 ◽
Vol 243
(1)
◽
pp. 129-133
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