Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy

1988 ◽  
Vol 53 (2) ◽  
pp. 97-98 ◽  
Author(s):  
D. A. Andrews ◽  
M. A. Z. Rejman‐Greene ◽  
B. Wakefield ◽  
G. J. Davies
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Selective Area Growth ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Selective Area ◽  
Area Growth ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Multiple Quantum Well Laser

Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy

2000 ◽  
Vol 39 (Part 2, No. 11A) ◽  
pp. L1081-L1083 ◽  
Author(s):  
Jun Suda ◽  
Tatsuro Kurobe ◽  
Shigeru Nakamura ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Cubic Gan ◽  
Metalorganic Molecular Beam Epitaxy

InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

2004 ◽  
Vol 40 (1) ◽  
pp. 33 ◽  
Author(s):  
S.E. Hooper ◽  
M. Kauer ◽  
V. Bousquet ◽  
K. Johnson ◽  
J.M. Barnes ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser
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