Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors

2014 ◽  
Vol 211 (9) ◽  
pp. 2126-2133 ◽  
Author(s):  
Sung Haeng Cho ◽  
Min Ki Ryu ◽  
Hee-Ok Kim ◽  
Oh-Sang Kwon ◽  
Eun-Sook Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Interface Engineering ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium ◽  
The Stability

Effect of SiO2 and SiO2/SiNx Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity

2015 ◽  
Vol 62 (3) ◽  
pp. 869-874 ◽  
Author(s):  
Md Delwar Hossain Chowdhury ◽  
Mallory Mativenga ◽  
Jae Gwang Um ◽  
Ravi K. Mruthyunjaya ◽  
Gregory N. Heiler ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
High Humidity ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium ◽  
The Stability
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