Microstructure and carrier-transport behaviors of nanocrystalline silicon thin films annealed at various temperatures

2016 ◽  
Vol 213 (7) ◽  
pp. 1675-1679 ◽  
Author(s):  
Dan Shan ◽  
Yang Ji ◽  
Jie Xu ◽  
Peng Lu ◽  
Xiaofan Jiang ◽  
...  
1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


2013 ◽  
Vol 178 (9) ◽  
pp. 568-573
Author(s):  
Steve Reynolds ◽  
Rudi Brüggemann ◽  
Björn Grootoonk ◽  
Vlad Smirnov

2002 ◽  
Vol 403-404 ◽  
pp. 91-96 ◽  
Author(s):  
C. Gonçalves ◽  
S. Charvet ◽  
A. Zeinert ◽  
M. Clin ◽  
K. Zellama

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  

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