scholarly journals Transient photocurrents as a spatially resolved probe of carrier transport and defect distributions in silicon thin films

2013 ◽  
Vol 178 (9) ◽  
pp. 568-573
Author(s):  
Steve Reynolds ◽  
Rudi Brüggemann ◽  
Björn Grootoonk ◽  
Vlad Smirnov
Keyword(s):  
Thin Films ◽  
Carrier Transport ◽  
Spatially Resolved ◽  
Silicon Thin Films

Erratum: “Spatially resolved photoconductive properties of profiled polycrystalline silicon thin films” [J. Appl. Phys. 91, 5671 (2002)]

2002 ◽  
Vol 92 (4) ◽  
pp. 2219-2219 ◽  
Author(s):  
Tom J. Savenije ◽  
Patrick A. T. T. van Veenendaal ◽  
Matthijs P. de Haas ◽  
John M. Warman ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Spatially Resolved ◽  
Silicon Thin Films

Microstructure and carrier-transport behaviors of nanocrystalline silicon thin films annealed at various temperatures

2016 ◽  
Vol 213 (7) ◽  
pp. 1675-1679 ◽  
Author(s):  
Dan Shan ◽  
Yang Ji ◽  
Jie Xu ◽  
Peng Lu ◽  
Xiaofan Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Transport ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

Spatially resolved photoconductive properties of profiled polycrystalline silicon thin films

2002 ◽  
Vol 91 (9) ◽  
pp. 5671-5676 ◽  
Author(s):  
Tom J. Savenije ◽  
Patrick A. T. T. van Veenendaal ◽  
Matthijs P. de Haas ◽  
John M. Warman ◽  
Ruud E. I. Schropp
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Spatially Resolved ◽  
Silicon Thin Films

Deposition of Heterogeneous Silicon Thin Films-Structure and Electric States-

2000 ◽  
Vol 609 ◽  
Author(s):  
Isamu Shimizu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Glass Substrate ◽  
Polycrystalline Silicon ◽  
Carrier Transport ◽  
Gaseous Mixture ◽  
Silicon Thin Films ◽  
Step Growth ◽  
The Relationship ◽  
Carrier Transport Properties

ABSTRACTHeterogeneous silicon thin films exhibited various microstructures were prepared by plasma enhanced(PE)-CVD from gaseous mixture of SiF4+H2 (SiH4) on glass substrate. Efficient parameters for controlling the microstructures were reviewed together with the way to grow crystalline seeds on glass by repeating the deposition and etching. Two step growth where polycrystalline silicon thin films were epitaxially grown on the seeds made on glass was proposed to accelerated the growth rate. The relationship between the microstructure and the carrier-transport properties are addressed, as well.

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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