Study of Infra-red Spectroscopy on Bonding Environment and Structural Properties of Nanocrystalline Silicon Thin Films Grown by VHF-PECVD Process

Silicon ◽  
2018 ◽  
Vol 11 (4) ◽  
pp. 1925-1937
Author(s):  
Sucheta Juneja ◽  
Mansi Sharma ◽  
Sushil Kumar
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Infra Red

Crystalline and Structural Properties Dependence on RF Power and Deposition Temperature of Sputtered Nanocrystalline Silicon Thin Films on Teflon and Glass Substrates

2012 ◽  
Vol 576 ◽  
pp. 475-479
Author(s):  
Norhidayatul Hikmee Mahzan ◽  
Shaiful Bakhtiar Hashim ◽  
Sukreen Hana Herman ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Properties ◽  
Deposition Temperature ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Rf Power ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Scanning Electron

Nanocrystalline silicon (nc-Si) thin films were deposited on glass and polytetrafluoroethylene (PTFE, teflon) substrates using Radio frequency (RF) magnetron sputtering. The effect of RF power and deposition temperature on the physical and structural properties of nc-Si on the glass and Teflon substrate was studied. The thin films properties were examined by Raman spectroscopy and field emission scanning electron microscopy (FESEM). We found that the thickness of thin films increased with increased RF power and deposition temperature. Raman spectroscopy results it showed that, with increasing RF power and deposition temperature can cause the changing of crystallinity on both glass and Teflon substrate.

Morphological, luminescence and structural properties of nanocrystalline silicon thin films

2013 ◽  
Vol 48 (3) ◽  
pp. 1027-1033 ◽  
Author(s):  
Atif Mossad Ali ◽  
Hikaru Kobayashi ◽  
Takao Inokuma ◽  
Ali Al-Hajry
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Nanocrystalline silicon thin films prepared by radiofrequency magnetron sputtering

2002 ◽  
Vol 403-404 ◽  
pp. 91-96 ◽  
Author(s):  
C. Gonçalves ◽  
S. Charvet ◽  
A. Zeinert ◽  
M. Clin ◽  
K. Zellama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Hot Filament
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