scholarly journals INVESTIGATION OF GROWTH MECHANISM OF NANOCRYSTALLINE SILICON THIN FILMS PREPARED BY HOT-FILAMENT CHEMICAL VAPOR DEPOSITION

1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  
2007 ◽  
Vol 515 (19) ◽  
pp. 7658-7661 ◽  
Author(s):  
P. Alpuim ◽  
M. Andrade ◽  
V. Sencadas ◽  
M. Ribeiro ◽  
S.A. Filonovich ◽  
...  

2006 ◽  
Vol 910 ◽  
Author(s):  
Abdul Rafik Middya ◽  
Jian-Jun Liang ◽  
Kartik Ghosh

AbstractIn this work, we report on nucleation and growth of silicon thin films on glass substrate with “five-fold” symmetry and “six-fold” symmetry by ceramics hot wire chemical vapor deposition. We observed “confinement of heat and photon” is a powerful approach in developing silicon thin films with novel structure, i.e. quasicrystalline silicon thin films on glass substrate. We found unambiguously that photons emitted from the hot filament influence the nucleation of nanocrystal silicon that produces new type of silicon thin films with “five-fold” symmetry and “six-fold” symmetry.


2008 ◽  
Vol 255 (5) ◽  
pp. 2910-2915 ◽  
Author(s):  
P.Q. Luo ◽  
Z.B. Zhou ◽  
K.Y. Chan ◽  
D.Y. Tang ◽  
R.Q. Cui ◽  
...  

2011 ◽  
Vol 519 (11) ◽  
pp. 3501-3508 ◽  
Author(s):  
N.A. Bakr ◽  
A.M. Funde ◽  
V.S. Waman ◽  
M.M. Kamble ◽  
R.R. Hawaldar ◽  
...  

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.


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