Optical signatures of silicon and oxygen related DX centers in AlN

2017 ◽  
Vol 214 (9) ◽  
pp. 1600749 ◽  
Author(s):  
Klaus Thonke ◽  
Matthias Lamprecht ◽  
Ramon Collazo ◽  
Zlatko Sitar
Keyword(s):  
Dx Centers

Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs

1992 ◽  
Vol 83-87 ◽  
pp. 769-774 ◽  
Author(s):  
L. Dobaczewski ◽  
I.D. Hawkins ◽  
P. Kaczor ◽  
M. Missous ◽  
I. Poole ◽  
...  
Keyword(s):  
Laplace Transform ◽  
Dx Centers

Generation–recombination noise of DX centers in AlN:Si

2001 ◽  
Vol 79 (15) ◽  
pp. 2396-2398 ◽  
Author(s):  
S. T. B. Goennenwein ◽  
R. Zeisel ◽  
O. Ambacher ◽  
M. S. Brandt ◽  
M. Stutzmann ◽  
...  
Keyword(s):  
Dx Centers

Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Ultrasonic Vibrations ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dx Centers ◽  
Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

Emission energies of Si-DX centers in various AlGaAs microstructures

1995 ◽  
Vol 56 (3-4) ◽  
pp. 599-602
Author(s):  
E. Litwin-Staszewska ◽  
R. Piotrzkowski ◽  
S. Contreras ◽  
F. Kobbi ◽  
V. Mosser ◽  
...  
Keyword(s):  
Dx Centers

Sn-related DX centers in Ga0.7Al0.3As

1989 ◽  
Vol 158 (1-3) ◽  
pp. 581-583
Author(s):  
A.M. Hayes ◽  
D.L. Williamson ◽  
A. Qutzourhit ◽  
P. Small ◽  
P. Gibart ◽  
...  
Keyword(s):  
Dx Centers

scholarly journals 35×4 Substates of DX Centers in AlGaAs:Si

1993 ◽  
Vol 84 (4) ◽  
pp. 765-768
Author(s):  
G. Ostermayer ◽  
G. Brunthaler ◽  
G. Stöger ◽  
W. Jantsch ◽  
Z. Wilamowski
Keyword(s):  
Dx Centers

Theory of DX Centers in AlxGa1-x Alloys

1989 ◽  
Vol 163 ◽  
Author(s):  
D. J. Chadi ◽  
S. B. Zhang
Keyword(s):  
Theoretical Model ◽  
Ab Initio ◽  
Electronic Properties ◽  
Lattice Distortion ◽  
Substitutional Site ◽  
Ionization Energies ◽  
Dx Centers ◽  
Large Lattice ◽  
Self Consistent ◽  
Pseudo Potential

AbstractA theoretical model for DX centers which explains their unusual electronic properties in terms of two distinct bonding configurations for donor impurities in AlxGa1-x As alloys is examined. The results of our ab initio self-consistent pseudo-potential calculations show that for x > ≃20%, the normal fourfold coordinated substitutional site becomes unstable with respect to a large lattice distortion. The model explains the large difference between the thermal and optical ionization energies of DX centers.

Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure

1987 ◽  
Vol 50 (14) ◽  
pp. 921-923 ◽  
Author(s):  
J. C. Nabity ◽  
Michael Stavola ◽  
J. Lopata ◽  
W. C. Dautremont‐Smith ◽  
C. W. Tu ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Dx Centers
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