scholarly journals Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors

2019 ◽  
Vol 216 (17) ◽  
pp. 1970058
Author(s):  
Akihiro Suzuki ◽  
Takeshi Kadono ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
Ayumi Masada ◽  
...  
Keyword(s):  
High Performance ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

scholarly journals Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors

2019 ◽  
Vol 216 (17) ◽  
pp. 1900172
Author(s):  
Akihiro Suzuki ◽  
Takeshi Kadono ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
Ayumi Masada ◽  
...  
Keyword(s):  
High Performance ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors

2022 ◽  
Vol 137 ◽  
pp. 106211
Author(s):  
Ryosuke Okuyama ◽  
Takeshi Kadono ◽  
Ayumi Onaka-Masada ◽  
Akihiro Suzuki ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Hydrogen Diffusion ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Diffusion Behavior ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

(Invited) Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review

2018 ◽  
Vol 86 (5) ◽  
pp. 77-93 ◽  
Author(s):  
Kazunari Kurita ◽  
Yoshihiro Koga ◽  
Ryousuke Okuyama ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Image Sensors ◽  
Silicon Wafers ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Bonding Technique ◽  
Ion Implanted

scholarly journals Diffusion kinetic of hydrogen in CH3O-molecular-ion-implanted silicon wafer for CMOS image sensors

2018 ◽  
Vol 57 (8) ◽  
pp. 081302 ◽  
Author(s):  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
Takeshi Kadono ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Image Sensors ◽  
Diffusion Kinetic ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A review

2021 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ayumi Onaka-Masada ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon Wafer ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors

Proximity gettering of C3H5carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

2016 ◽  
Vol 55 (12) ◽  
pp. 121301 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Transition Metal ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted

scholarly journals A Study on Optical Camera Communication using Gaussian Window

2018 ◽  
Vol 7 (4.38) ◽  
pp. 1399
Author(s):  
Chi Young Park ◽  
Soo Young Shin
Keyword(s):  
High Performance ◽  
Visible Light Communication ◽  
Image Sensors ◽  
Receiver Side ◽  
Gaussian Window ◽  
Digital Devices ◽  
Cmos Image Sensors ◽  
Indoor Wireless ◽  
Transmission Speed ◽  
Optical Camera Communication

Optical Camera Communication (OCC) is a Visible Light Communication (VLC) technique using a camera mounted on a digital device as a receiver. Nowadays, most digital devices are equipped with cameras using CMOS Image Sensors (CIS). In this paper, OCC is designed by using Rolling Shutter (RS), which is image output method of CIS. The transmitted data is captured using a camera application built in smartphone, and processed by MATLAB to restore the data. In this paper, we reduce the error rate by performing signal processing using Gaussian Window (GW) on the receiver side without using high-performance camera or directly controlling camera. In addition, we presented the avaliable range of transmission speed of OCC for indoor wireless communication and compared it with throughput in receiver side.  

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