scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors

2022 ◽  
Vol 137 ◽  
pp. 106211
Author(s):  
Ryosuke Okuyama ◽  
Takeshi Kadono ◽  
Ayumi Onaka-Masada ◽  
Akihiro Suzuki ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Hydrogen Diffusion ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Diffusion Behavior ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

(Invited) Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review

2018 ◽  
Vol 86 (5) ◽  
pp. 77-93 ◽  
Author(s):  
Kazunari Kurita ◽  
Yoshihiro Koga ◽  
Ryousuke Okuyama ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Image Sensors ◽  
Silicon Wafers ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Bonding Technique ◽  
Ion Implanted

scholarly journals Super Field-of-View Lensless Camera by Coded Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (6) ◽  
pp. 1329 ◽  
Author(s):  
Tomoya Nakamura ◽  
Keiichiro Kagawa ◽  
Shiho Torashima ◽  
Masahiro Yamaguchi
Keyword(s):  
Imaging System ◽  
Complementary Metal Oxide Semiconductor ◽  
Image Sensor ◽  
Image Sensors ◽  
Computational Imaging ◽  
Field Of View ◽  
Oxide Semiconductor ◽  
Back Side ◽  
Cmos Image Sensors ◽  
Rich Information

A lensless camera is an ultra-thin computational-imaging system. Existing lensless cameras are based on the axial arrangement of an image sensor and a coding mask, and therefore, the back side of the image sensor cannot be captured. In this paper, we propose a lensless camera with a novel design that can capture the front and back sides simultaneously. The proposed camera is composed of multiple coded image sensors, which are complementary-metal-oxide-semiconductor (CMOS) image sensors in which air holes are randomly made at some pixels by drilling processing. When the sensors are placed facing each other, the object-side sensor works as a coding mask and the other works as a sparsified image sensor. The captured image is a sparse coded image, which can be decoded computationally by using compressive sensing-based image reconstruction. We verified the feasibility of the proposed lensless camera by simulations and experiments. The proposed thin lensless camera realized super-field-of-view imaging without lenses or coding masks and therefore can be used for rich information sensing in confined spaces. This work also suggests a new direction in the design of CMOS image sensors in the era of computational imaging.

scholarly journals Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors

2019 ◽  
Vol 216 (17) ◽  
pp. 1900172
Author(s):  
Akihiro Suzuki ◽  
Takeshi Kadono ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
Ayumi Masada ◽  
...  
Keyword(s):  
High Performance ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

Proximity gettering of C3H5carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

2016 ◽  
Vol 55 (12) ◽  
pp. 121301 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Transition Metal ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted

scholarly journals Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers

Sensors ◽  
2020 ◽  
Vol 20 (22) ◽  
pp. 6620
Author(s):  
Ayumi Onaka-Masada ◽  
Takeshi Kadono ◽  
Ryosuke Okuyama ◽  
Ryo Hirose ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Oxygen Concentration ◽  
Epitaxial Layer ◽  
Dark Current ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Device Fabrication ◽  
White Spot ◽  
Epitaxial Silicon ◽  
Ion Implanted

The impact of hydrocarbon-molecular (C3H6)-ion implantation in an epitaxial layer, which has low oxygen concentration, on the dark characteristics of complementary metal-oxide-semiconductor (CMOS) image sensor pixels was investigated by dark current spectroscopy. It was demonstrated that white spot defects of CMOS image sensor pixels when using a double epitaxial silicon wafer with C3H6-ion implanted in the first epitaxial layer were 40% lower than that when using an epitaxial silicon wafer with C3H6-ion implanted in the Czochralski-grown silicon substrate. This considerable reduction in white spot defects on the C3H6-ion-implanted double epitaxial silicon wafer may be due to the high gettering capability for metallic contamination during the device fabrication process and the suppression effects of oxygen diffusion into the device active layer. In addition, the defects with low internal oxygen concentration were observed in the C3H6-ion-implanted region of the double epitaxial silicon wafer after the device fabrication process. We found that the formation of defects with low internal oxygen concentration is a phenomenon specific to the C3H6-ion-implanted double epitaxial wafer. This finding suggests that the oxygen concentration in the defects being low is a factor in the high gettering capability for metallic impurities, and those defects are considered to directly contribute to the reduction in white spot defects in CMOS image sensor pixels.

scholarly journals Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors

2019 ◽  
Vol 216 (17) ◽  
pp. 1970058
Author(s):  
Akihiro Suzuki ◽  
Takeshi Kadono ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
Ayumi Masada ◽  
...  
Keyword(s):  
High Performance ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

scholarly journals Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

2018 ◽  
Vol 57 (6) ◽  
pp. 061302 ◽  
Author(s):  
Yoshihiro Koga ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Room Temperature ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted
Sign in / Sign up

Export Citation Format

Share Document