Proximity gettering of C3H5carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities

2016 ◽  
Vol 55 (12) ◽  
pp. 121301 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Transition Metal ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted

scholarly journals Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors

2018 ◽  
Vol 57 (6) ◽  
pp. 061302 ◽  
Author(s):  
Yoshihiro Koga ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ayumi Onaka-Masada ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Room Temperature ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Cmos Image Sensors ◽  
Cluster Ion ◽  
Ion Implanted

scholarly journals Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2073 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
...  
Keyword(s):  
Dark Current ◽  
Image Sensor ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Device Performance ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon–molecular–ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of oxygen of the Czochralski silicon (CZ) substrate bulk during Complementary metal-oxide-semiconductor (CMOS) device fabrication processes. We evaluated the electrical device performance of CMOS image sensor fabricated on this type of wafer by using dark current spectroscopy. We found fewer white spot defects compared with those of intrinsic gettering (IG) silicon wafers. We believe that these hydrocarbon–molecular–ion–implanted silicon epitaxial wafers will improve the device performance of CMOS image sensors.

scholarly journals Hydrogen diffusion behavior in CH2P-molecular-ion-implanted silicon wafers for CMOS image sensors

2022 ◽  
Vol 137 ◽  
pp. 106211
Author(s):  
Ryosuke Okuyama ◽  
Takeshi Kadono ◽  
Ayumi Onaka-Masada ◽  
Akihiro Suzuki ◽  
Koji Kobayashi ◽  
...  
Keyword(s):  
Hydrogen Diffusion ◽  
Image Sensors ◽  
Silicon Wafers ◽  
Diffusion Behavior ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

scholarly journals Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors

2018 ◽  
Vol 57 (2) ◽  
pp. 021304 ◽  
Author(s):  
Ayumi Onaka-Masada ◽  
Toshiro Nakai ◽  
Ryosuke Okuyama ◽  
Hidehiko Okuda ◽  
Takeshi Kadono ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Low Oxygen ◽  
Cmos Image Sensors ◽  
Concentration Layer ◽  
Cluster Ion ◽  
Low Oxygen Concentration ◽  
Si Wafer ◽  
Ion Implanted

(Invited) Proximity Gettering Design of Hydrocarbon Molecular Ion Implanted Silicon Wafers Using Direct Bonding Technique for Advanced CMOS Image Sensors: A Review

2018 ◽  
Vol 86 (5) ◽  
pp. 77-93 ◽  
Author(s):  
Kazunari Kurita ◽  
Yoshihiro Koga ◽  
Ryousuke Okuyama ◽  
Takeshi Kadono ◽  
Satoshi Shigematsu ◽  
...  
Keyword(s):  
Image Sensors ◽  
Silicon Wafers ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Bonding Technique ◽  
Ion Implanted

scholarly journals Fundamental Characteristics of Cyanide‐Related Multielement Molecular Ion‐Implanted Epitaxial Si Wafers for High‐Performance CMOS Image Sensors

2019 ◽  
Vol 216 (17) ◽  
pp. 1900172
Author(s):  
Akihiro Suzuki ◽  
Takeshi Kadono ◽  
Ryo Hirose ◽  
Ryosuke Okuyama ◽  
Ayumi Masada ◽  
...  
Keyword(s):  
High Performance ◽  
Image Sensors ◽  
Molecular Ion ◽  
Cmos Image Sensors ◽  
Ion Implanted

Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review

2017 ◽  
Vol 214 (7) ◽  
pp. 1700216 ◽  
Author(s):  
Kazunari Kurita ◽  
Takeshi Kadono ◽  
Ryousuke Okuyama ◽  
Satoshi Shigemastu ◽  
Ryo Hirose ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Cluster ◽  
Image Sensors ◽  
Implantation Technique ◽  
Cmos Image Sensors ◽  
Cluster Ion
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