Radiation damage by thermal neutrons in Si(Li) nuclear radiation detectors

1972 ◽  
Vol 13 (1) ◽  
pp. K37-K39 ◽  
Author(s):  
R. Burmeister
2014 ◽  
Vol 778-780 ◽  
pp. 1046-1049 ◽  
Author(s):  
Fatima Issa ◽  
Vanessa Vervisch ◽  
Laurent Ottaviani ◽  
Dora Szalkai ◽  
Ludo Vermeeren ◽  
...  

Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.


2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  

2004 ◽  
Vol 1 (4) ◽  
pp. 1071-1074 ◽  
Author(s):  
M. Niraula ◽  
Y. Agata ◽  
K. Yasuda ◽  
A. Nakamura ◽  
T. Aoki ◽  
...  

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