Determination of quasi-Fermi level at the metal–semiconductor interface in a forward-biased schottky barrier diode

1983 ◽  
Vol 80 (1) ◽  
pp. 79-84 ◽  
Author(s):  
S. S. Simeonov ◽  
M. D. Ivanovitch
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Semiconductor Interface ◽  
Quasi Fermi Level

scholarly journals Reduction of Schottky Barrier Height at Graphene/Germanium Interface with Surface Passivation

2019 ◽  
Vol 9 (23) ◽  
pp. 5014
Author(s):  
Courtin ◽  
Moréac ◽  
Delhaye ◽  
Lépine ◽  
Tricot ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Surface Passivation ◽  
2D Materials ◽  
Semiconductor Interface ◽  
Weakly Interact ◽  
Fermi Level Pinning ◽  
Semiconductor Interfaces

Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals forces, deposition of 2D materials avoids the formation of the large density of state at the semiconductor interface often responsible for Fermi level pinning. Here, we demonstrate the possibility to alleviate Fermi-level pinning and reduce the Schottky barrier height by the association of surface passivation of germanium with the deposition of 2D graphene.

Determination of the quasi‐Fermi‐level separation in single‐quantum‐wellp‐i‐ndiodes

1996 ◽  
Vol 80 (8) ◽  
pp. 4599-4603 ◽  
Author(s):  
Ernest Tsui ◽  
Jenny Nelson ◽  
Keith Barnham ◽  
Chris Button ◽  
John S. Roberts
Keyword(s):  
Fermi Level ◽  
Single Quantum ◽  
Quasi Fermi Level
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