On the Electrical Switching Characteristics of the Bulk Metal Chalcogenide Glassy Semiconductor Cu0.10As0.40Se0.50 with a Double Point Contact Electrode System

1995 ◽  
Vol 147 (2) ◽  
pp. 497-507 ◽  
Author(s):  
M. Domínguez ◽  
E. Márquez ◽  
P. Villares ◽  
R. Jiménez-Garay
Keyword(s):  
Double Point ◽  
Point Contact ◽  
Electrode System ◽  
Metal Chalcogenide ◽  
Bulk Metal ◽  
Electrical Switching ◽  
Glassy Semiconductor ◽  
Switching Characteristics ◽  
Chalcogenide Glassy Semiconductor ◽  
Contact Electrode

scholarly journals Analysis of electrical switching effects in the chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99

2009 ◽  
Vol 63 (3) ◽  
pp. 183-187 ◽  
Author(s):  
Milos Slankamenac ◽  
Svetlana Lukic ◽  
Milos Zivanov
Keyword(s):  
Sample Surface ◽  
Negative Resistance ◽  
Amorphous Semiconductor ◽  
Electrical Switching ◽  
Curve Tracer ◽  
Current Voltage ◽  
Glassy Semiconductor ◽  
The Impact ◽  
With Memory ◽  
Chalcogenide Glassy Semiconductor

The current-voltage characteristics of the bulk metal chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99 are obtained by Tektronix 576 Curve Tracer. It was found that this glass has current-controlled negative resistance (CCNR) and switching characteristic with memory. Experimental results have shown a strong decrease in electrical resistivity and threshold voltage due to the presence of the metallic element copper and change of ambient temperature. Also, photomicrographs of the sample surface are presented and the impact of electrical switching on forming crystalline conductive channels on the surface of the investigated amorphous semiconductor is discussed.

A stable superconducting double point-contact magnetometer in which the voltage sensitivity is improved by filling the hole with copper

Physica ◽  
1972 ◽  
Vol 59 (1) ◽  
pp. 155-160 ◽  
Author(s):  
A.Th.A.M. de Waele ◽  
C.P.M. Vergouwen ◽  
A.A.J. Matsinger ◽  
R. de Bruyn Ouboter
Keyword(s):  
Double Point ◽  
Point Contact ◽  
Voltage Sensitivity

Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity

2019 ◽  
Vol 53 (11) ◽  
pp. 1507-1510
Author(s):  
S. N. Garibova ◽  
A. I. Isayev ◽  
S. I. Mekhtiyeva ◽  
S. U. Atayeva
Keyword(s):  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

Phase-locking in double-point-contact spin-transfer devices

Nature ◽  
2005 ◽  
Vol 437 (7057) ◽  
pp. 393-395 ◽  
Author(s):  
F. B. Mancoff ◽  
N. D. Rizzo ◽  
B. N. Engel ◽  
S. Tehrani
Keyword(s):  
Double Point ◽  
Phase Locking ◽  
Point Contact ◽  
Spin Transfer

scholarly journals Структура халькогенидного стеклообразного полупроводника Se-=SUB=-95-=/SUB=-As-=SUB=-5-=/SUB=-, легированного примесью EuF-=SUB=-3-=/SUB=-

2019 ◽  
Vol 53 (11) ◽  
pp. 1540
Author(s):  
С.Н. Гарибова ◽  
А.И. Исаев ◽  
С.И. Мехтиева ◽  
С.У. Атаева
Keyword(s):  
Raman Scattering ◽  
Local Structure ◽  
Amorphous Matrix ◽  
Chemical Activity ◽  
Chemical Bonds ◽  
Structural Elements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glassy Semiconductor ◽  
Chalcogenide Glassy Semiconductor

The local structure of film samples of chalcogenide glassy semiconductor Se95As5 and Se95As5(EuF3)x (x = 0.01 ÷ 1 at%) have been studied by X-ray diffraction and Raman scattering. The ‘‘quasi-period’’ of the structure, the correlation length, the structural elements and chemical bonds that form the amorphous matrix of the materials studied have been determined. Interpretation of results obtained has been carried out within the framework of the Elliot voidscluster model, taking into account the chemical activity of europium ions.

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