Modulation of critical current density in polycrystalline boron-doped diamond by surface modification

2013 ◽  
Vol 250 (9) ◽  
pp. 1943-1949 ◽  
Author(s):  
Keisuke Natsui ◽  
Takashi Yamamoto ◽  
Takeshi Watanabe ◽  
Yoichi Kamihara ◽  
Yasuaki Einaga
2013 ◽  
Vol 250 (9) ◽  
Author(s):  
Keisuke Natsui ◽  
Takashi Yamamoto ◽  
Takeshi Watanabe ◽  
Yoichi Kamihara ◽  
Yasuaki Einaga

2018 ◽  
Vol 2 (4) ◽  
pp. 045015 ◽  
Author(s):  
Dinesh Kumar ◽  
Shibnath Samanta ◽  
K Sethupathi ◽  
M S Ramachandra Rao

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Taisuke Kageura ◽  
Masakuni Hideko ◽  
Ikuto Tsuyuzaki ◽  
Aoi Morishita ◽  
Akihiro Kawano ◽  
...  

Abstract Superconducting quantum interference devices (SQUIDs) are currently used as magnetic flux detectors with ultra-high sensitivity for various applications such as medical diagnostics and magnetic material microstructure analysis. Single-crystalline superconducting boron-doped diamond is an excellent candidate for fabricating high-performance SQUIDs because of its robustness and high transition temperature, critical current density, and critical field. Here, we propose a fabrication process for a single-crystalline boron-doped diamond Josephson junction with regrowth-induced step edge structure and demonstrate the first operation of a single-crystalline boron-doped diamond SQUID above 2 K. We demonstrate that the step angle is a significant parameter for forming the Josephson junction and that the step angle can be controlled by adjusting the microwave plasma-enhanced chemical vapour deposition conditions of the regrowth layer. The fabricated junction exhibits superconductor–weak superconductor–superconductor-type behaviour without hysteresis and a high critical current density of 5800 A/cm2.


Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.


Author(s):  
I-Fei Tsu ◽  
D.L. Kaiser ◽  
S.E. Babcock

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.


2021 ◽  
Vol 22 ◽  
pp. 14-19
Author(s):  
Soon-Gil Jung ◽  
Duong Pham ◽  
Jung Min Lee ◽  
Yoonseok Han ◽  
Won Nam Kang ◽  
...  

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