Electronic states in nitride semiconductor quantum dots: A tight-binding approach

2006 ◽  
Vol 3 (6) ◽  
pp. 1675-1678 ◽  
Author(s):  
S. Schulz ◽  
G. Czycholl
Keyword(s):  
Quantum Dots ◽  
Tight Binding ◽  
Electronic States ◽  
Semiconductor Quantum Dots ◽  
Nitride Semiconductor

Optical absorption in semiconductor quantum dots: A tight-binding approach

1993 ◽  
Vol 47 (12) ◽  
pp. 7132-7139 ◽  
Author(s):  
Lavanya M. Ramaniah ◽  
Selvakumar V. Nair
Keyword(s):  
Quantum Dots ◽  
Optical Absorption ◽  
Tight Binding ◽  
Semiconductor Quantum Dots

scholarly journals Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions

2001 ◽  
Vol 63 (19) ◽  
Author(s):  
Seungwon Lee ◽  
Lars Jönsson ◽  
John W. Wilkins ◽  
Garnett W. Bryant ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Dots ◽  
Tight Binding ◽  
Semiconductor Quantum Dots ◽  
Wave Functions ◽  
Electron Hole

scholarly journals Calculations on Electronic States in QDs with Saturated Shapes

2003 ◽  
Vol 02 (01n02) ◽  
pp. 37-48 ◽  
Author(s):  
Wei Cheng ◽  
Shang-Fen Ren
Keyword(s):  
Quantum Dots ◽  
Group Theory ◽  
Size Range ◽  
Tight Binding ◽  
Electronic States ◽  
Spherical Shape ◽  
Irreducible Representations ◽  
Tight Binding Model ◽  
Binding Model ◽  
Ge Quantum Dots

Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight-binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.

Electrical control of the exciton spin in nitride semiconductor quantum dots

2009 ◽  
Vol 94 (22) ◽  
pp. 223114 ◽  
Author(s):  
Mathieu Sénès ◽  
Delphine Lagarde ◽  
Katherine L. Smith ◽  
Andrea Balocchi ◽  
Stewart E. Hooper ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Semiconductor Quantum Dots ◽  
Electrical Control ◽  
Nitride Semiconductor

Giant exciton-light coupling in large size semiconductor quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
Bernard Gil ◽  
Alexey V. Kavokin
Keyword(s):  
Quantum Dots ◽  
Electromagnetic Field ◽  
Decay Time ◽  
Coupling Strength ◽  
Radiative Decay ◽  
Electronic States ◽  
Semiconductor Quantum Dots ◽  
Bulk Properties ◽  
Large Size ◽  
Light Coupling

ABSTRACTWe investigate the strength of the coupling of the electronic states with the electromagnetic field in semiconductor nanospheres, taking into account the retardation effect. We show that the coupling strength is particularly strong: the bulk properties are so enhanced that the radiative decay time can reach some 30 picoseconds for quantum dots sizes of some 30 nm.

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