Growth behavior and optical properties of In-rich InGaN quantum dots by metal-organic chemical vapor deposition

2007 ◽  
Vol 4 (1) ◽  
pp. 112-115 ◽  
Author(s):  
Hee Jin Kim ◽  
Soon-Yong Kwon ◽  
Hyun Jin Kim ◽  
Hyunseok Na ◽  
Yoori Shin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Behavior ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Optical properties of 1.3-\mum InAs/GaAs quantum dots grown by metal organic chemical vapor deposition

2009 ◽  
Vol 7 (8) ◽  
pp. 741-743 ◽  
Author(s):  
李林 Lin Li ◽  
刘国军 Guojun Liu ◽  
李占国 Zhanguo Li ◽  
李梅 Mei Li ◽  
王晓华 Xiaohua Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Optical Properties of Novel GaN 3D Structures Grown by Metal-Organic Chemical Vapor Deposition (MOCVD)

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L698-L701 ◽  
Author(s):  
Marco Sacilotti ◽  
Luc Imhoff ◽  
Colette Dumas ◽  
Pierre Viste ◽  
Jean-Claude Vial ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
3D Structures ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Interdiffused InGaAsP Quantum Dots Lasers on GaAs by Metal Organic Chemical Vapor Deposition

2005 ◽  
Vol 891 ◽  
Author(s):  
Ronald A. Arif ◽  
Nam-Heon Kim ◽  
Luke J. Mawst ◽  
Nelson Tansu
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Emission Wavelength ◽  
Organic Chemical ◽  
Phosphorus Species ◽  
Metal Organic ◽  
Self Assembled ◽  
Organic Chemical Vapor Deposition

ABSTRACTSelf-assembled InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) have a natural peak emission wavelength around 1150-1200-nm due to its specific composition, shapes, and sizes. In this work, a new method to engineer the emission wavelength capability of MOCVD-grown InGaAs QD on GaAs to ∼1000-nm by utilizing interdiffused InGaAsP QD has been demonstrated. Incorporation of phosphorus species from the GaAsP barriers into the MOCVD-grown self-assembled InGaAs QD is achieved by interdiffusion process. Reasonably low threshold characteristics of ∼ 200-280 A/cm2 have been obtained for interdiffused InGaAsP QD lasers emitting at 1040-nm, which corresponds to blue-shift of ∼ 85-90-nm in comparison to that of unannealed InGaAs QD laser.

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

2019 ◽  
Vol 114 (24) ◽  
pp. 241103 ◽  
Author(s):  
Caroline E. Reilly ◽  
Cory Lund ◽  
Shuji Nakamura ◽  
Umesh K. Mishra ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Infrared Luminescence ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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