Bias dependence of internal quantum efficiency and carrier capture in a green (In,Ga)N single-quantum-well diode

2009 ◽  
Vol 6 (S2) ◽  
pp. S703-S706
Author(s):  
Akihiro Satake ◽  
Kenichi Soejima ◽  
Kenzo Fujiwara
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Capture

6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs

1994 ◽  
Vol 30 (21) ◽  
pp. 1787-1789 ◽  
Author(s):  
J. Blondelle ◽  
H. De Neve ◽  
P. Van Daele ◽  
R. Baets ◽  
P. Demeester ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Planar Microcavity

scholarly journals Experimental Evidence of the Impact of Nitrogen on Carrier Capture and Escape Times in InGaAsN/GaAs Single Quantum Well

2012 ◽  
Vol 4 (6) ◽  
pp. 2262-2271 ◽  
Author(s):  
Lifang Xu ◽  
D. Patel ◽  
C. S. Menoni ◽  
Jeng-Ya Yeh ◽  
L. J. Mawst ◽  
...  
Keyword(s):  
Quantum Well ◽  
Experimental Evidence ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Capture ◽  
The Impact

Doping effects on carrier capture in a single quantum well by ensemble Monte Carlo

1996 ◽  
Vol 74 (S1) ◽  
pp. 220-224
Author(s):  
B. Reid ◽  
M. Abou-Khalil ◽  
R. Maciejko
Keyword(s):  
Monte Carlo ◽  
Quantum Well ◽  
Pulse Excitation ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Capture ◽  
Ensemble Monte Carlo ◽  
Doping Effects ◽  
Long Time ◽  
Femtosecond Light Pulse

Using a bipolar ensemble Monte Carlo coupled with a Poisson equation solver, we simulate, for the first time, carrier capture with both types of carriers in an InGaAs/InP-doped single quantum well, following femtosecond light-pulse excitation. We show that Coulomb interaction between electrons and holes is very efficient in keeping the capture ambipolar for a long time. However, for short times, the capture is unipolar. Our results indicate that for these kinds of experiments, Monte Carlo simulations with only one type of carrier give questionable results.

Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission

2021 ◽  
Author(s):  
Oluwatobi Olorunsola ◽  
Solomon Ojo ◽  
Grey Abernathy ◽  
Yiyin Zhou ◽  
Sylvester Amoah ◽  
...  
Keyword(s):  
Energy Level ◽  
Quantum Well ◽  
Quantum Efficiency ◽  
Carrier Density ◽  
Photoluminescence Spectra ◽  
Single Quantum ◽  
Pumping Power ◽  
Single Quantum Well ◽  
Carrier Collection ◽  
Ground Energy

Abstract In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22 nm compared to our previously reported 9-nm well configuration. The thicker well leads to: i) lowered ground energy level in Γ valley offering more bandgap directness; ii) increased carrier density in the well; and iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence signal allows for the estimation of quantum efficiency, which was unattainable in previous studies. Using pumping-power-dependent photoluminescence spectra at 20 K, the peak spontaneous quantum efficiency and external quantum efficiency were measured as 37.9% and 1.45%, respectively.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser
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