Fluorination of Al2 O3 blocking layer for improving the performance of metal-oxide-nitride-oxide-silicon flash memory

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201307122 ◽

2013 ◽

Vol 7 (6) ◽

pp. 434-437 ◽

Author(s):

Qingbo Tao ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Blocking Layer ◽

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Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

Journal of Applied Physics ◽

10.1063/1.1609650 ◽

2003 ◽

Vol 94 (8) ◽

pp. 5408 ◽

Author(s):

Sangmoo Choi ◽

Myungjun Cho ◽

Hyunsang Hwang ◽

Jung Woo Kim

Keyword(s):

Metal Oxide ◽

Blocking Layer ◽

High K ◽

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Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or $\hbox{N}_{2}\hbox{O}$-Grown Oxynitride as Tunnel Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2013.2295325 ◽

2014 ◽

Vol 14 (1) ◽

pp. 9-12

Author(s):

J. X. Chen ◽

J. P. Xu ◽

L. Liu ◽

X. D. Huang ◽

P. T. Lai ◽

...

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Tunnel Layer ◽

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Decrease in Interference Effects between Cells for Metal–Oxide–Nitride–Oxide–Silicon NAND Flash Memory Devices with Metal Spacer Layers

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.074301 ◽

2011 ◽

Vol 50 (7R) ◽

pp. 074301

Author(s):

Sung Ho Kim ◽

Joo Hyung You ◽

Tae Whan Kim

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Memory Devices ◽

Interference Effects ◽

Nand Flash Memory ◽

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Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal–Oxide–Nitride–Oxide–Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.021103 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 021103

Author(s):

Ryota Fujitsuka ◽

Katsuyuki Sekine ◽

Akiko Sekihara ◽

Atsushi Fukumoto ◽

Junya Fujita ◽

...

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Charge Trapping ◽

Oxide Semiconductor ◽

Nand Flash Memory ◽

Multi Level ◽

Nitride Oxide ◽

Semiconductor Type

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Visualization Using the Scanning Nonlinear Dielectric Microscopy of Electrons and Holes Localized in the Thin Gate Film of Metal-Oxide-Nitride-Oxide-Semiconductor Type Flash Memory

2006 7th Annual Non-Volatile Memory Technology Symposium ◽

10.1109/nvmt.2006.378866 ◽

2006 ◽

Author(s):

Koichiro Honda ◽

Yasuo Cho

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Oxide Semiconductor ◽

Nonlinear Dielectric ◽

Nitride Oxide ◽

Semiconductor Type

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Visualization of Electrons Localized in Metal–Oxide–Nitride–Oxide–Semiconductor Flash Memory Thin Gate Films by Detecting High-Order Nonlinear Permittivity Using Scanning Nonlinear Dielectric Microscopy

Applied Physics Express ◽

10.1143/apex.5.036602 ◽

2012 ◽

Vol 5 (3) ◽

pp. 036602 ◽

Author(s):

Koichiro Honda ◽

Yasuo Cho

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Oxide Semiconductor ◽

Nonlinear Dielectric ◽

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Visualization of electrons and holes localized in the thin gate film of metal-oxide-nitride-oxide-semiconductor type Flash memory by scanning nonlinear dielectric microscopy

Nanotechnology ◽

10.1088/0957-4484/16/3/017 ◽

2005 ◽

Vol 16 (3) ◽

pp. S90-S93 ◽

Author(s):

Koichiro Honda ◽

Sunao Hashimoto ◽

Yasuo Cho

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Oxide Semiconductor ◽

Nonlinear Dielectric ◽

Nitride Oxide ◽

Semiconductor Type

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Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal–Oxide–Nitride–Oxide–Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.021103 ◽

2012 ◽

Vol 51 ◽

pp. 021103 ◽

Author(s):

Ryota Fujitsuka ◽

Katsuyuki Sekine ◽

Akiko Sekihara ◽

Atsushi Fukumoto ◽

Junya Fujita ◽

...

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Charge Trapping ◽

Oxide Semiconductor ◽

Nand Flash Memory ◽

Multi Level ◽

Nitride Oxide ◽

Semiconductor Type

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Decrease in Interference Effects between Cells for Metal–Oxide–Nitride–Oxide–Silicon NAND Flash Memory Devices with Metal Spacer Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.074301 ◽

2011 ◽

Vol 50 (7) ◽

pp. 074301

Author(s):

Sung Ho Kim ◽

Joo Hyung You ◽

Tae Whan Kim

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Memory Devices ◽

Interference Effects ◽

Nand Flash Memory ◽

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Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

MRS Proceedings ◽

10.1557/proc-803-gg4.2 ◽

2003 ◽

Vol 803 ◽

Author(s):

Koichiro Honda ◽

Yasuo Cho

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Flash Memory ◽

The Other ◽

Oxide Semiconductor ◽

Nonlinear Dielectric ◽

Nitride Oxide ◽

Semiconductor Type

ABSTRACTWe used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N4-SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

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