Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

Journal of Applied Physics ◽

10.1063/1.1609650 ◽

2003 ◽

Vol 94 (8) ◽

pp. 5408 ◽

Author(s):

Sangmoo Choi ◽

Myungjun Cho ◽

Hyunsang Hwang ◽

Jung Woo Kim

Keyword(s):

Metal Oxide ◽

Blocking Layer ◽

High K ◽

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Fluorination of Al2 O3 blocking layer for improving the performance of metal-oxide-nitride-oxide-silicon flash memory

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201307122 ◽

2013 ◽

Vol 7 (6) ◽

pp. 434-437 ◽

Author(s):

Qingbo Tao ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Flash Memory ◽

Blocking Layer ◽

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Metal–Oxide–High-$k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2165285 ◽

2011 ◽

Vol 58 (11) ◽

pp. 3847-3851 ◽

Author(s):

Fa-Hsyang Chen ◽

Tung-Ming Pan ◽

Fu-Chien Chiu

Keyword(s):

Metal Oxide ◽

Charge Trapping ◽

Memory Device ◽

Blocking Layer ◽

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Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO2 Stacked Layers for Analog Memory Application

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1016.1065 ◽

2021 ◽

Vol 1016 ◽

pp. 1065-1070

Author(s):

Shun Ichiro Ohmi ◽

Jooyoung Pyo

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Nonvolatile Memory ◽

Voltage Control ◽

Analog Memory ◽

High K ◽

Multi Level ◽

In this paper, we have investigated the threshold voltage (VTH) control of metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memory (NVM) with high-k HfN/HfO2 stacked layers for analog memory application. The Si surface atomically flattening was found to significantly improve the VTH controllability of the MONOS NVM with high-k HfN/HfO2 stacked layers. The multi-level-cell (MLC) operation by controlling the program voltage at the source and drain was demonstrated utilizing MONOS NVM with high-k HfN/HfO2 stacked layers.

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Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

Journal of Materials Chemistry C ◽

10.1039/d0tc04725b ◽

2021 ◽

Author(s):

Dong Gun Kim ◽

Cheol Hyun An ◽

Sanghyeon Kim ◽

Dae Seon Kwon ◽

Junil Lim ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Tio2 Film ◽

Single Layer ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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Graphene oxide charge blocking layer with high K TiO2 nanowire for improved capacitive memory

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.159095 ◽

2021 ◽

Vol 868 ◽

pp. 159095

Author(s):

Prasenjit Deb ◽

Jay Chandra Dhar

Keyword(s):

Graphene Oxide ◽

Blocking Layer ◽

Oxide Charge ◽

Tio2 Nanowire ◽

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Analysis of Carrier Traps in Si3N4in Oxide/Nitride/Oxide for Metal/Oxide/Nitride/Oxide/Silicon Nonvolatile Memory

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1441 ◽

1999 ◽

Vol 38 (Part 1, No. 3A) ◽

pp. 1441-1447 ◽

Author(s):

Hiroshi Aozasa ◽

Ichiro Fujiwara ◽

Akihiro Nakamura ◽

Yasutoshi Komatsu

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Carrier Traps ◽

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Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks

Journal of Applied Physics ◽

10.1063/1.5031025 ◽

2018 ◽

Vol 124 (22) ◽

pp. 224102 ◽

Author(s):

S. M. Pazos ◽

F. L. Aguirre ◽

K. Tang ◽

P. McIntyre ◽

F. Palumbo

Keyword(s):

Metal Oxide ◽

Frequency Dispersion ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications

Microelectronics Reliability ◽

10.1016/j.microrel.2007.01.027 ◽

2007 ◽

Vol 47 (4-5) ◽

pp. 606-609 ◽

Author(s):

Hsin-hao Hsu ◽

Joseph Ya-min Lee

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric ◽

Memory Applications

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Hot Carrier ◽

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

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