High‐Performance Piezo‐Phototronic Devices Based on Intersubband Transition of Wurtzite Quantum Well

Small ◽  
2021 ◽  
pp. 2008106
Author(s):  
Minjiang Dan ◽  
Gongwei Hu ◽  
Jiaheng Nie ◽  
Lijie Li ◽  
Yan Zhang
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Intersubband Transition

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

High performance In0.15Ga0.85As/Al0.15Ga0.85As quantum well modulation doped FETs

1985 ◽  
Author(s):  
W.T. Masselink ◽  
J. Klem ◽  
T. Henderson ◽  
A. Ketterson ◽  
J.S. Gedymin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance

High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

2022 ◽  
Vol 43 (01) ◽  
pp. 110-118
Author(s):  
Cui-cui LIU ◽  
◽  
Nan LIN ◽  
Xiao-yu MA ◽  
Hong-qi JING ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
High Performance ◽  
Semiconductor Laser Diode ◽  
Absorption Window

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

1994 ◽  
Vol 30 (2) ◽  
pp. 424-440 ◽  
Author(s):  
M. Chand ◽  
S.N.G. Chu ◽  
N.K. Dutta ◽  
J. Lopata ◽  
M. Geva ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Quantum Well Lasers ◽  
Fiber Amplifiers ◽  
Erbium Doped ◽  
Ingaas Quantum Well

High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers

2019 ◽  
Vol 34 (5) ◽  
pp. 055013 ◽  
Author(s):  
Zhongliang Qiao ◽  
Xiang Li ◽  
Hong Wang ◽  
Te Li ◽  
Xin Gao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Performance ◽  
Double Quantum ◽  
Double Quantum Well
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