scholarly journals Resistive Switching Memory: Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory (Small 41/2020)

Small ◽  
2020 ◽  
Vol 16 (41) ◽  
pp. 2070228
Author(s):  
Ji Su Han ◽  
Quyet Van Le ◽  
Hyojung Kim ◽  
Yoon Jung Lee ◽  
Da Eun Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Dual Phase ◽  
Resistive Switching Memory ◽  
Halide Perovskites ◽  
Conducting Bridge ◽  
Switching Memory

Metal halide perovskites for resistive switching memory devices and artificial synapses

2019 ◽  
Vol 7 (25) ◽  
pp. 7476-7493 ◽  
Author(s):  
Bixin Li ◽  
Wei Hui ◽  
Xueqin Ran ◽  
Yingdong Xia ◽  
Fei Xia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Metal Halide ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Metal Halide Perovskite ◽  
Recent Developments ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Switching Memory

This article highlights recent developments of emerging metal halide perovskite based resistive switching memory devices and artificial synapses.

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

2013 ◽  
Vol 22 (9) ◽  
pp. 097101 ◽  
Author(s):  
Kai-Liang Zhang ◽  
Kai Liu ◽  
Fang Wang ◽  
Fu-Hong Yin ◽  
Xiao-Ying Wei ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Conducting Bridge ◽  
Switching Memory

Layered (n-C4H9NH3)2CsAgBiBr7 Perovskite for Bipolar Resistive Switching Memory with High ON/OFF Ratio

Nanoscale ◽  
2021 ◽  
Author(s):  
So-Yeon Kim ◽  
June-Mo Yang ◽  
Sun-Ho Lee ◽  
Nam-Gyu Park
Keyword(s):  
Resistive Switching ◽  
Lead Free ◽  
Potential Candidate ◽  
Bipolar Resistive Switching ◽  
3 Dimensional ◽  
Resistive Switching Memory ◽  
Halide Perovskite ◽  
Switching Memory

Lead-based halide perovskite has been proposed as a potential candidate for resistive switching memristor due to high ON/OFF ratio along with millivolt-level low operational voltage. However, lead-free perovskites with 3-dimensional...

Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8578-8584 ◽  
Author(s):  
Bohee Hwang ◽  
Jang-Sik Lee
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Lead Free ◽  
Multilevel Data ◽  
Resistive Switching Memory ◽  
Fast Switching ◽  
Free Air ◽  
Stable Hybrid ◽  
Switching Memory

The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.

Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory

Small ◽  
2020 ◽  
Vol 16 (41) ◽  
pp. 2003225
Author(s):  
Ji Su Han ◽  
Quyet Van Le ◽  
Hyojung Kim ◽  
Yoon Jung Lee ◽  
Da Eun Lee ◽  
...  
Keyword(s):  
Lead Free ◽  
Dual Phase ◽  
Halide Perovskites ◽  
Conducting Bridge

Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory

2020 ◽  
Vol 12 (14) ◽  
pp. 17039-17045 ◽  
Author(s):  
SangMyeong Lee ◽  
Hyojung Kim ◽  
Dong Hoe Kim ◽  
Won Bin Kim ◽  
Jae Myeong Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Halide Perovskite ◽  
Conducting Bridge ◽  
Switching Memory
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