Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory

2020 ◽  
Vol 12 (14) ◽  
pp. 17039-17045 ◽  
Author(s):  
SangMyeong Lee ◽  
Hyojung Kim ◽  
Dong Hoe Kim ◽  
Won Bin Kim ◽  
Jae Myeong Lee ◽  
...  

Small ◽  
2020 ◽  
Vol 16 (41) ◽  
pp. 2070228
Author(s):  
Ji Su Han ◽  
Quyet Van Le ◽  
Hyojung Kim ◽  
Yoon Jung Lee ◽  
Da Eun Lee ◽  
...  


2019 ◽  
Vol 7 (25) ◽  
pp. 7476-7493 ◽  
Author(s):  
Bixin Li ◽  
Wei Hui ◽  
Xueqin Ran ◽  
Yingdong Xia ◽  
Fei Xia ◽  
...  

This article highlights recent developments of emerging metal halide perovskite based resistive switching memory devices and artificial synapses.



2019 ◽  
Vol 69 ◽  
pp. 106-113 ◽  
Author(s):  
Abbas Shaban ◽  
Mojtaba Joodaki ◽  
Saeed Mehregan ◽  
Ivo W. Rangelow


2013 ◽  
Vol 22 (9) ◽  
pp. 097101 ◽  
Author(s):  
Kai-Liang Zhang ◽  
Kai Liu ◽  
Fang Wang ◽  
Fu-Hong Yin ◽  
Xiao-Ying Wei ◽  
...  


Nanoscale ◽  
2021 ◽  
Author(s):  
So-Yeon Kim ◽  
June-Mo Yang ◽  
Sun-Ho Lee ◽  
Nam-Gyu Park

Lead-based halide perovskite has been proposed as a potential candidate for resistive switching memristor due to high ON/OFF ratio along with millivolt-level low operational voltage. However, lead-free perovskites with 3-dimensional...



2020 ◽  
Vol 87 ◽  
pp. 105932 ◽  
Author(s):  
Jitendra Singh ◽  
R.G. Singh ◽  
Subodh K. Gautam ◽  
Himanshi Gupta ◽  
Fouran Singh




2021 ◽  
pp. 211-246
Author(s):  
Qazi Muhammad Saqib ◽  
Muhammad Umair Khan ◽  
Jinho Bae


Sign in / Sign up

Export Citation Format

Share Document